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Transistors - RF, Mosfets, Misc.

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  1. 2SC900 NPN Epoxy Transistor (NOS)

    2SC900 NPN Epoxy Transistor (NOS)

    $0.91

    • Vcbo= 30v
    • Ic= 30 mA
    • Pw= 250 mW
    • 100 MHz
    • Used in RF LN applications

    New Old Stock, No longer available for export
    MFR: Unbranded
    SKU: 2SC900

  2. 2SC923 Silicon NPN Transistor  (NOS)

    2SC923 Silicon NPN Transistor (NOS)

    $1.91

    Maximum Collector Power Dissipation (Pc): 0.25 W
    Maximum Collector-Base Voltage |Vcb|: 30 V
    Transition Frequency (ft): 50 MHz

    New Old Stock
    SKU: 2SC923

  3. 2SC945 NPN Silicon Planar Epitaxial Transistor (NOS)

    2SC945 NPN Silicon Planar Epitaxial Transistor (NOS)

    $1.91

    Designed for audio Frequency Amplifier. Complement to the PNP 2SA733

    New Old Stock * No longer available for export
    MFR: NEC
    SKU: 2SC945

  4. MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

    MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

    Made with original Motorola Die

    Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

    • Guaranteed performance at 400 MHz, 28 Vdc
    • Output power = 10 W
    • Power gain = 12 dB min.
    • Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input Impedance

    MRF: M/A-COM
    SKU: MRF134-MA

  5. MRF136 M/A-COM Transistor 15 watt 28v 400 MHz

    MRF136 M/A-COM Transistor 15 watt 28v 400 MHz

    Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in single-ended configuration  N–Channel enhancement mode
    .
    • Guaranteed 28 volt, 150 MHz performance  Output power = 15 watts  Narrowband gain = 16 dB (Typ.)  Efficiency = 60% (Typ.)
    • Small– and large–signal characterization
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability, ideally suited for Cass A operation
    • Facilitates manual gain control, ALC and modulation techniques

    MFR: M/A-COM
    SKU: MRF136-MA

  6. MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

    MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

    Made with original Motorola Die

    Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF136Y-MA

  7. MRF137 M/A-COM Transistor 30W 28V 400 MHz

    MRF137 M/A-COM Transistor 30W 28V 400 MHz

    $39.90

    Designed for wideband large signal output and drive stages Product Image  up to 400 MHz range.  N–Channel enhancement mode

    • Guaranteed 28 V, 150 MHz performance  Output power = 30 W  Minimum gain = 13 dB  Efficiency — 60% (Typical)
    • Small– and large–signal characterization
    • Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques

    Limit, 10 per customer.

    MFR: M/A-COM

  8. MRF140 M/A-COM Transistor 150W 28V 150 MHz

    MRF140 M/A-COM Transistor 150W 28V 150 MHz

    $72.90

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MA

  9. MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    $145.90

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MP-MA

  10. MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    $249.90

    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Operating Frequency: 175 MHz
    • Gain: 12 Db
    • Output Power: 300 W

    MFR: MA/COM
    SKU: MRF141G-MA

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