Transistors - RF, Mosfets, Misc.
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MRF904 Microsemi RF & Microwave Discrete Low Power Transistor 500 MHz (NOS)
$2.91 -
MRF630 Microsemi RF Power Transistor NPN Silicon 12.5 V 470 MHz 3.0 W (NOS)
$9.91 -
MRF555 Motorola NPN Silicon RF Low Power Transistor 12.5 V 470 MHz 1.5 W (NOS)
$6.91 -
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MRF545 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
$5.91 As low as: $5.06Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
- Silicon PNP, high Frequency, high breakdown, Transistor
- Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
- High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
- High FT - 1400 MHz
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF545-MSC -
MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)
$2.91 -
MRF553 Microsemi RF and Microwave Discrete Low Power Transistor 1.5 W 175 MHz 12.5 V (NOS)
$4.91 As low as: $4.43Designed primarily for wideband large signal stages in the VHF frequency range.
- Specified @ 12.5 V, 175 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 11.5 dB, Efficiency 60% (Typ)
- Cost Effective PowerMacro Package
- Electroless Tin Plated Leads for Improved Solderability
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
MFR: MRF553-MSC -
MRF557 Microsemi RF and Microwave Discrete Low Power Transistor (NOS)
$2.91 As low as: $2.62 -
MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)
$4.91Designed primarily for wideband large signal stages in the UHF frequency range.
- Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
- Cost Effective Macro X Package
- Electroless Tin Plated Leads for Improved Solderability
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF559-MSC -
MRF581G Microsemi Transistor (NOS)
$3.91- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 18V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
- Gain: 13dB ~ 15.5dB
- Power - Max: 1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
No longer manufactured
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF581G-MSC