Transistors - RF, Mosfets, Misc.
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2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)
$129.91The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
For a Matched Quad (4), simply order Two Pairs
MFR: Toshiba, Japan
New Old Stock * No Longer Available for Export
SKU: 2SC2782A-MP -
2SC2879 Toshiba Transistor Silicon NPN Epitaxial Planar-type Early Version-ORIGINAL (Pull)
$129.91 -
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V
$128.91 As low as: $122.46Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MRF: M/A-COM
SKU: MRF428-MA -
MRF492A Motorola NPN Silicon RF Power Transistor Stud Mount 50 MHz 70W 12.5V (NOS)
$128.91 -
MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V
$127.91 As low as: $121.51Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 17 pF typ. @ VDS = 28 V
MFR: M/A-COM
SKU: MRF275L-MA -
MRF140 M/A-COM Transistor 150W 28V 150 MHz
$125.91Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA -
MRF497 Motorola NPN Silicon RF Power Transistor 40W 50 MHz 12V Matched Pair (2) (NOS)
$125.91Out of stock
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2SC2290 Toshiba Transistors Matched Pair (2) (Early Version) (NOS)
$125.91The 2SC2290 is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a high-frequency transistor commonly used in RF power amplifier circuits.
The early version of the 2SC2290 transistor was a single transistor package. This version was commonly used in a variety of applications, such as in citizen band (CB) radios, linear amplifiers, and other high-frequency communication systems.The 2SC2290 transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and compact design make it a popular choice for use in various RF power amplifier circuits.
Matched Pair (2) Transistors Silicon NPN Epitaxial
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SC2290-MP -
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2SC2097H Mitsubishi NPN Epitaxial Planar Transistor 30 MHz 13.5V 75W Matched Pair (2) (NOS)
$124.91
