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Transistors - RF, Mosfets, Misc.

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  1. SRF3795 Motorola 12V Transistor Premium Grade Replacement for the MRF454 Matched Pair (2) (NOS)

    SRF3795 Motorola 12V Transistor Premium Grade Replacement for the MRF454 Matched Pair (2) (NOS)

    $123.91

    Transistor 12V Matched Pair (2) premium grade replacement for MRF454 80 Watt Transistor
    The Motorola SRF3795 has High Gain selection G, Blue beta or higher, and it is a premium grade replacement for the MRF454.
    New Old Stock * No longer available for export
    MFR: Motorola
    MFR: SRF3795MP

  2. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  3. MRF323 Motorola Transistor 20W 28V 400 MHz (NOS)

    MRF323 Motorola Transistor 20W 28V 400 MHz (NOS)

    $119.91

    • Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
    • Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input impedance

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF323-MOT

  4. MRF460 Motorola NPN Silicon Power Transistor 40W (PEP) 30 MHz 12.5V Matched Quad (4) (NOS)

    MRF460 Motorola NPN Silicon Power Transistor 40W (PEP) 30 MHz 12.5V Matched Quad (4) (NOS)

    $119.91

    Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 240 W (PEP), Minimum gain = 12 dB, Efficiency = 40%
    • Intermodulation distortion at rated power output —IMD = –30 dB (max)
    • Isothermal-Resister Design Results in Rugged Device
    • Replacement for 2N6368

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF460MQ

  5. SD1477MP Transistor, match pair

    SD1477MP Transistor, match pair

    $119.91

    SD1477MP Transistor, match pair

  6. 2SC2290A Toshiba Transistors "Red Dot" Pb Free RoHS Compliant Matched Paid (2) (NOS)

    2SC2290A Toshiba Transistors "Red Dot" Pb Free RoHS Compliant Matched Paid (2) (NOS)

    $119.91

    The 2SC2290A is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is an improved version of the 2SC2290 transistor, featuring enhancements such as reduced on-resistance and improved linearity.

    The 2SC2290A transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and lead-free and RoHS compliant design make it a popular choice for use in various RF power amplifier circuits.

    Silicon NPN Epitaxial Planar Type 2-30 MHz SSB Linear Power Amplifier Applications,
    Low Supply Voltage Use

    • Specified 12.5V, 28MHz Characteristics
    • Output Power : Po=60W PEP
    • Power Gain : Gp=11.8dB (Min.)
    • Collector Efficiency : C = 35% (Min.)
    • Intermodulation Distortion : IMD = - 30dB (Max)

    New Old Stock * No longer available for export
    MFR: Toshiba, Japan
    SKU: 2SC2290A-MP

  7. UTV8100B  Transistor, Mosfet, GHz Tech/APT  Cross for TPV8100B

    UTV8100B Transistor, Mosfet, GHz Tech/APT Cross for TPV8100B

    Regular Price: $129.50

    Special Price $119.50

    As low as: $109.00

    UTV8100B  Transistor, Mosfet, MFR: GHz Tech/APT  (Cross for TPV8100B)

  8. MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    $118.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    • Enhanced thermal performance
    • Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MFR: M/A-COM
    SKU: MRF151A-MA

  9. MRF455 M/A-COM  NPN Silicon Power Transistor Matched Pair 60 Watt 14-30 MHz 12.5v 0.380" Flange

    MRF455 M/A-COM NPN Silicon Power Transistor Matched Pair 60 Watt 14-30 MHz 12.5v 0.380" Flange

    $116.91

    Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.  2 Transistors in a Matched Set.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 60 W, Minimum gain = 13 dB

    MFR: M/A-COM
    SKU: MRF455MP-MA

  10. MRF136 Motorola Transistor 15 Watt 28V 400 MHz (NOS)

    MRF136 Motorola Transistor 15 Watt 28V 400 MHz (NOS)

    $115.91

    Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in single-ended configuration  N–Channel enhancement mode

    • Guaranteed 28 volt, 150 MHz performance  Output power = 15 watts  Narrowband gain = 16 dB (Typ.)  Efficiency = 60% (Typ.)
    • Small– and large–signal characterization
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability, ideally suited for Cass A operation
    • Facilitates manual gain control, ALC and modulation techniques

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF136-MP

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