Transistors - RF, Mosfets, Misc.

Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 8 pF @ VDS = 28 V
• Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
• Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)

Parts we have available are early version just after Motorola sold to M/A-COM.  All parts in stock are produced with original Motorola die. 

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA

2N6439 MACOM RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V

SKU: 2N6439-MA

Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

• Guaranteed performance at 400 MHz, 28 Vdc
• Output power = 10 W
• Power gain = 12 dB min.
• Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent input Impedance

MRF: M/A-COM
SKU: MRF134-MA

Made with original Motorola Die

Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF136Y-MA

Made with original Motorola Die

Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

• Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
• Superior high order IMD
• MD(d3) (150 W PEP): –30 dB (Typ.)
• IMD(d11) (150 W PEP): –60 dB (Typ.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: M/A-COM
SKU: MRF140-MA

• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability
• Operating Frequency: 175 MHz
• Gain: 12 Db
• Output Power: 300 W

MFR: MA/COM
SKU: MRF141G-MA

Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

MFR: M/A-COM
SKU: MRF166W-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

MRF: M/A-COM
SKU: MRF173CQ-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

MFR: M/A-COM
SKU: MRF173-MA