Transistors - RF, Mosfets, Misc.
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2SC945 NPN Silicon Planar Epitaxial Transistor (NOS)
$1.91 -
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
$94.91 As low as: $90.16Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA -
MRF136 M/A-COM Transistor 15 watt 28v 400 MHz
$36.91 As low as: $35.06Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode
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• Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency = 60% (Typ.)
• Small– and large–signal characterization
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability, ideally suited for Cass A operation
• Facilitates manual gain control, ALC and modulation techniquesMFR: M/A-COM
SKU: MRF136-MA -
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
$84.91 As low as: $76.62 -
MRF137 M/A-COM Transistor 30W 28V 400 MHz
$51.91Designed for wideband large signal output and drive stages Product Image up to 400 MHz range. N–Channel enhancement mode
• Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniquesLimit, 10 per customer.
MFR: M/A-COM
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MRF140 M/A-COM Transistor 150W 28V 150 MHz
$125.91Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA -
MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)
$249.91Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MP-MA -
MRF141G M/A-COM RF Power FET 300W 175MHz 28V
$265.91 -
MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
$69.91 As low as: $64.95Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA -
MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)
$63.91 As low as: $60.71
