Transistors - RF, Mosfets, Misc.
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2SC2705 Toshiba Silicon NPN Transistor (NOS)
$1.91 -
2SC2782 Toshiba Silicon NPN Epitaxial Planar Transistor (NOS)
$65.91 -
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (NOS)
$65.91The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
Will substitute for 2SC5125
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2782A -
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)
$319.90Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF422-MA-MQ -
TXL90 Solid State Scientific NPN Silicon RF Transistor 80W (NOS)
$19.91 -
PT9776 TRW Transistor 75W PEP 13dB 12.5V 28MHz (NOS)
$17.95 -
RFM00U7U Toshiba Transistor 200mw 10.8dB Surface Mount (NOS)
$0.91
