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MRF/SRF/M Series

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  1. MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)

    MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)

    $34.91

    Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.

    • Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
    • Emitter ballast and low current density for improved MTBF
    • Common emitter for improved stability

    New Old Stock * No longer available for export
    MRF: M/A-COM
    SKU: MRF313-MA

  2. MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

    Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

    • Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
    • Facilitates manual gain control, ALC and modulation techniques
    • Tested for load mismatch at all phase angles with 30:1 VSWR
    • Excellent thermal stability and ideally suited for Class A operation

    MFR: M/A-COM
    SKU: MRF158-MA

  3. MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    $39.91

    Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

    • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
    • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Class A and AB characterization
    • BLX 13 equivalent

    MFR: M/A-COM
    SKU: MRF426-MA

  4. MRF160 M/A-COM  RF MOSFET Broadband Power FET 4W to 500MHz 28V

    MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V

    Designed primarily for wideband large–signal output and driver from 30–500 MHz.
    N–Channel enhancement mode MOSFET

    • Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% Tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 0.8 pF Typical at VDS = 28 V

    MFR: M/A-COM
    SKU: MRF160-MA

  5. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

    MFR: M/A-COM
    SKU: MRF173-MA

  6. MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V

    MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V

    Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.

    • Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications

    MRF: M/A-COM
    SKU: MRF314-MA

  7. MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.

    • Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
    • Built–in matching network for broadband operation using double match technique
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications
    • Characterized for 100 =8 500 MHz

    MRF: M/A-COM
    SKU: MRF327-MA

  8. MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V

    MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V

     Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET

    • MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
    • Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Facilitates manual gain control, ALC and modulation techniques
    • Excellent thermal stability, ideally suited for Class A operation
    • Low Crss — 4.0 pF @ VDS = 28 V

    MFR: M/A-COM
    SKU: MRF166C-MA

  9. MRF171A  M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)

    $53.91

    Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET

    • Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
    • Excellent thermal stability, ideally suited for Class A operation
    • Facilitates manual gain control, ALC and modulation techniques
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Low Crss – 8 pF @ VDS = 28 V
    • Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
    • Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)

    Parts we have available are early version just after Motorola sold to M/A-COM.  All parts in stock are produced with original Motorola die. 

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF171A-MA

  10. MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    $57.91

    Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 60 W, Minimum gain = 13 dB

    MFR: M/A-COM
    SKU: MRF455-MA

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