MRF/SRF/M Series

 Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET

• MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
• Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Facilitates manual gain control, ALC and modulation techniques
• Excellent thermal stability, ideally suited for Class A operation
• Low Crss — 4.0 pF @ VDS = 28 V

MFR: M/A-COM
SKU: MRF166C-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

MFR: M/A-COM
SKU: MRF173-MA

Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.

• Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability applications

MRF: M/A-COM
SKU: MRF314-MA

Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.

• Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
• Built–in matching network for broadband operation using double match technique
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability applications
• Characterized for 100 =8 500 MHz

MRF: M/A-COM
SKU: MRF327-MA

Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET

• Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 V

MFR: M/A-COM
SKU: MRF160-MA

Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

• Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
• Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Class A and AB characterization
• BLX 13 equivalent

MFR: M/A-COM
SKU: MRF426-MA

Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

• Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
• Facilitates manual gain control, ALC and modulation techniques
• Tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability and ideally suited for Class A operation

MFR: M/A-COM
SKU: MRF158-MA