1-800-RFPARTS (1-800-737-2787) 1-760-744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

MRF/SRF/M Series

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  1. MRF3866 APT RF & Microwave Discrete Low Power Transistor 17 dB 300 MHz

    MRF3866 APT RF & Microwave Discrete Low Power Transistor 17 dB 300 MHz

    • Low Cost SO-8 Plastic Surface Mount Package.
    • S-Parameter Characterization
    • Tape and Reel Packaging Options Available
    • Maximum Available Gain = 17 dB @ 300 MHz

    New Old Stock, No longer available for export
    MFR: APT
    SKU: MRF3866-APT

     

  2. MRF309 Motorola Transistor 28 Volt (NOS)

    MRF309 Motorola Transistor 28 Volt (NOS)

    $42.91

    Transistor 28 Volt
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF309

  3. MRF3866 Motorola NPN Silicon High-Frequency Transistor (NOS)

    MRF3866 Motorola NPN Silicon High-Frequency Transistor (NOS)

    $4.91

    NPN Silicon High-Frequency Transistor
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF3866-MOT

  4. MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    MRF323 M/A-COM Transistor 20 watt 28v 400 MHz

    $98.90

    Made with original Motorola Die

    • Designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
    • Guaranteed performance at 400 MHz, 28 V: Output power = 20 W, Power gain = 10 dB min., Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input impedance

    MFR: M/A-COM
    SKU: MRF323-MA

  5. MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)

    MRF313 M/A-COM NPN Silicon High-Frequency Transistor 1.0W 400MHz 28V (NOS)

    $34.91

    Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.

    • Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
    • Emitter ballast and low current density for improved MTBF
    • Common emitter for improved stability

    New Old Stock * No longer available for export
    MRF: M/A-COM
    SKU: MRF313-MA

  6. MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V

    MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V

    Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.

    • Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications

    MRF: M/A-COM
    SKU: MRF314-MA

  7. MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)

    MRF314 M/A-COM NPN Silicon Power Transistor 30W 30-200MHz 28V Matched Pair (2)

    $59.90

    Designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range.

    • Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications

    MRF: MA/COM
    SKU: MRF314MP-MA

  8. MRF316  M/A-COM NPN Silicon Power Transistor 80W 3.0-200MHz 28V

    MRF316 M/A-COM NPN Silicon Power Transistor 80W 3.0-200MHz 28V

    Designed primarily for wideband large–signal output amplifier stages in the 30–200 MHz frequency range.

    • Guaranteed performance at 150 MHz, 28 Vdc: Output power = 80 W, Minimum gain = 10 dB
    • Built–in matching network for broadband operation
    • 100% tested for load mismatch at all phase angles with: 30:1 VSWR
    • Gold metallization system for high reliability applications

    MFR: MA/COM
    SKU: MRF316-MA

  9. MRF317 M/A-COM NPN Silicon Power Transistor 100W 30-200MHz 28V

    MRF317 M/A-COM NPN Silicon Power Transistor 100W 30-200MHz 28V

    Designed primarily for wideband large–signal output amplifier stages in 30–200 MHz frequency range.

    • Guaranteed performance at 150 MHz, 28 Vdc: Output power = 100 W, Minimum gain = 9.0 dB
    • Built–in matching network for broadband operation
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • High output saturation power — ideally suited for 30 W carrier/120 W
    • Peak AM amplifier service
    • Guaranteed performance in broadband test fixture

    MFR: M/A-COM
    SKU: MRF317-MA

  10. MRF321 M/A-COM NPN  Silicon Power Transistor 10W 400MHz 28V (NOS)

    MRF321 M/A-COM NPN Silicon Power Transistor 10W 400MHz 28V (NOS)

    Made with original Motorola Die

    Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

    • Guaranteed performance at 400 MHz, 28 Vdc; Output power = 10 W, Power gain = 12 dB min., Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input Impedance

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF321-MA

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