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MRF/SRF/M Series

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  1. MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    MRF455 M/A-COM NPN Silicon Power Transistor 60 Watt 14-30 MHz 12.5v 0.380" Flange

    $57.91

    Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 60 W, Minimum gain = 13 dB

    MFR: M/A-COM
    SKU: MRF455-MA

  2. MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)

    MRF4427 Microsemi RF & Microwave Discrete Low Power Transistor 20dB 200 MHz (NOS)

    $1.91

    Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.

    • Low Cost SO-8 Plastic Surface Mount Package.
    • S-Parameter Characterization
    • Tape and Reel Packaging Options Available
    • Low Voltage Version of MRF3866
    • Maximum Available Gain – 20dB(typ) @ 200MHz

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF4427-MSC

  3. MRF429 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 50 V

    MRF429 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 50 V

    $212.91

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 dB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) —  IMD = –32 dB (Max)
    • Diffused emitter resistors for superior ruggedness
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MRF:M/A-COM
    SKU: MRF429MP-MA

  4. MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    $105.91

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    MFR: M/A-COM
    SKU: MRF429-MA

  5. MRF406 Motorola NPN Silicon RF Power Transistor 20W (PEP) 30 MHz 12.5V Matched Pair (2) (NOS)

    MRF406 Motorola NPN Silicon RF Power Transistor 20W (PEP) 30 MHz 12.5V Matched Pair (2) (NOS)

    $85.91

    Designed primarily for applications as a power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 Volt, 30 MHz Characteristics- Output Power= 20 W (PEP), Minimum Gain= 12 dB, Efficiency= 45%
    • Intermodulation Distortion at 20 W (PEP)= -30 dB (Min)

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF406MP

  6. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

    $109.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Min Frequency: 1 MHz
    • Gain: 10 dB
    • Bias Voltage: 12.5 V
    • Max Frequency: 30 MHz
    • Efficiency: 40 %
    • Pout: 100 W

    MFR: M/A-COM
    SKU: MRF421-MA

  7. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    $219.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MRF: M/A-COM
    SKU: MRF421MP-MA

  8. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  9. MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    MRF426 M/A-COM NPN Silicon Power Transistor 25 W (PEP) 30 MHz 28 V

    $39.91

    Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

    • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
    • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Class A and AB characterization
    • BLX 13 equivalent

    MFR: M/A-COM
    SKU: MRF426-MA

  10. MRF426 M/A-COM NPN Silicon Power Transistor Matched Pair 25W (PEP) 30MHz 28V

    MRF426 M/A-COM NPN Silicon Power Transistor Matched Pair 25W (PEP) 30MHz 28V

    $79.91

    Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

    • Specified 28 V, 30 MHz characteristics — Output power = 25 W (PEP), Minimum gain = 22 dB, Efficiency = 35%
    • Intermodulation distortion @ 25 W (PEP) —IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Class A and AB characterization
    • BLX 13 equivalent

    MFR: M/A-COM
    SKU: MRF426MP-MA

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