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  1. RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)

    RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)

    $8.91

    RoHS Compliance Silicon MOSFET Power Transistor 175MHz 520MHz 7W
    New Old Stock * No longer available for export
    MFR: Mitsubishi
    SKU: RD07MVS2-T112

  2. RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

    RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

    $43.91

    The RD70HVF1C-501 is a Mitsubishi silicon MOSFET power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF and UHF frequency ranges, with a frequency range of 136-174 MHz and 400-520 MHz, respectively.

    The RD70HVF1C-501 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF and UHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.

    RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 

    High power and High Gain:
    Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
    Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
    High Efficiency: 60%typ.on VHF Band
    High Efficiency: 55%typ.on UHF Band
    Integrated gate protection diode

    RoHS Compliant
    MFR: Mitsubishi
    SKU: RD70HVF1C-501

    See Data Sheet for more information

  3. RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

    RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

    $14.91 As low as: $12.76

    MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
    RoHS Compliant
    MFR #: RD15HVF1-501
    MFR: Mitsubishi, Japan
    SKU: RD15HVF1-501

    EOL 12/2022

  4. RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

    RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

    $54.91 As low as: $47.08

    The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.

    The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.

    MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
    RoHS Compliant
    MFR: Mitsubishi, Japan
    SKU: RD100HHF1C-501

    Data Sheet

  5. RD60HUF1C-501 Mitsubishi Transistor 60 Watt 520 MHz 12.5 Volts

    RD60HUF1C-501 Mitsubishi Transistor 60 Watt 520 MHz 12.5 Volts

    $30.91

    RoHS Compliance Silicon MOSFET Power Transistor
    520MHz, 60W
    MFR: Mitsubishi 
    MFR #: RD60HUF1C-501
    SKU: RD60HUF1C-501

  6. RD35HUP2-501 Mitsubishi Transistor 35 Watt 175/530MHz 12.5 Volts

    RD35HUP2-501 Mitsubishi Transistor 35 Watt 175/530MHz 12.5 Volts

    $28.91

    RoHS Compliance Silicon MOSFET Power Transistor 175/530 MHz 35 Watt 
    NOTE: Substitute for RD30HVF1
    MFR: Mitsubishi
    SKU: RD35HUP2-501

  7. RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    $49.91 As low as: $42.79

    Transistor 70 Watts 520 MHz 12.5 Volts

    This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant

    MFR #: RD70HUF2-501
    MFR: Mitsubishi
    SKU: RD70HUF2

  8. RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V

    RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V

    $24.91 As low as: $21.37

    RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

    • High Power and High Efficiency Pout=75Wtyp
    • Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
    • Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
    • Integrated gate protection diode.

    RoHS Compliant
    MFR: Mitsubishi
    SKU: RD70HUP2-501

    See Data Sheet

Items 21 to 28 of 28 total

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