1-800-RFPARTS (1-800-737-2787) 1-760-744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

Transistors - RF, Mosfets, Misc.

List  Grid 

per page
Set Descending Direction
  1. MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

    MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

    Made with original Motorola Die

    Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

    • Guaranteed performance at 400 MHz, 28 Vdc
    • Output power = 10 W
    • Power gain = 12 dB min.
    • Efficiency = 50% min.
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability
    • Computer–controlled wirebonding gives consistent input Impedance

    MRF: M/A-COM
    SKU: MRF134-MA

  2. MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

    MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

    Made with original Motorola Die

    Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF136Y-MA

  3. MRF140 M/A-COM Transistor 150W 28V 150 MHz

    MRF140 M/A-COM Transistor 150W 28V 150 MHz

    $125.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MA

  4. MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    $265.91

    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Operating Frequency: 175 MHz
    • Gain: 12 Db
    • Output Power: 300 W

    MFR: MA/COM
    SKU: MRF141G-MA

  5. MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

    Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

    MFR: M/A-COM
    SKU: MRF166W-MA

  6. MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V

    MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V

    $69.91

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.

    MRF: M/A-COM
    SKU: MRF173CQ-MA

  7. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

    MFR: M/A-COM
    SKU: MRF173-MA

  8. MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

    $97.91

    Out of stock

    Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET

    MRF:  M/A-COM
    SKU: MRF173MP-MA

  9. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    $161.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM
    SKU:MRF150-MA-MP

  10. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    $323.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM
    SKU: MRF150-MA-MQ

Items 1 to 10 of 48 total

Page:
  1. 1
  2. 2
  3. 3
  4. 4
  5. 5