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Transistors - RF, Mosfets, Misc.

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  1. MRF5015 Motorola RF Power Field Effect Transistor RF Mosfet N–Channel Enhancement–Mode 512 MHz 15W 12.5V (NOS)

    MRF5015 Motorola RF Power Field Effect Transistor RF Mosfet N–Channel Enhancement–Mode 512 MHz 15W 12.5V (NOS)

    $39.91

    Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.

    • Guaranteed Performance at 512 MHz, 12.5 Volts: Output Power — 15 Watts, Power Gain — 10 dB Min, Efficiency — 50% Min
    • Characterized with Series Equivalent Large–Signal Impedance Parameters
    • S–Parameter Characterization at High Bias Levels
    • Excellent Thermal Stability
    • All Gold Metal for Ultra Reliability
    • Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF5015

  2. MRF5943 Motorola NPN Silicon High Frequency Transistor (NOS)

    MRF5943 Motorola NPN Silicon High Frequency Transistor (NOS)

    $3.91

    Designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable for use as a Class A, B, or C output driver or pre-driver stages in VHF and UHF.

    • Low Cost SORF Plastic Surface Mount Package
    • Guarenteed RF Specification- |S21|2
    • S-Parameter Characterization

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF5943-MOT

  3. MRF517 APT RF & Microwave Discrete Low Power Transistor

    MRF517 APT RF & Microwave Discrete Low Power Transistor

    The MRF517 is a silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; pre-driver, driver, and output stages.

    • Silicon NPN, To-39 packaged VHF/UHF Transistor
    • Gpe = 10 dB (typ) @ 60 mA, 300 MHz
    • 3 GHz Current-Gain Bandwidth Product @ 60mA
    • Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz

    MFR: Advanced Power Technology RF
    SKU: MRF517-APT

  4. MRF5943G APT RF & Microwave Discrete Low Power Transistor (NOS)

    MRF5943G APT RF & Microwave Discrete Low Power Transistor (NOS)

    Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillator.

    • Low Cost SO-8 Plastic Surface Mount Package
    • S-Parameter Characterization
    • Maximum Available Gain: 17dB @ 300MHz

    New Old Stock * No longer available for export
    MFR: Advanced Power Technology RF (APTRF)
    SKU: MRF5943G-APT

  5. MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W (NOS)

    MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W (NOS)

    $19.90

    Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF5003

  6. MRF5943C Microsem RF & Microwave Discrete Low Power Transistor  (NOS)

    MRF5943C Microsem RF & Microwave Discrete Low Power Transistor (NOS)

    Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

    • Low Noise - 2.5 dB @ 500 MHZ
    • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
    • Ftau - 5.0 GHz @ 10v, 75mA
    • Cost Effective MacroX Package

    New Old Stock * No longer available for export
    MRF: Microsemi
    SKU: MRF5943C-MSC
     

  7. MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)

    MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)

    $6.90

    Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.

    • Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
    • GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
    • |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF586-MSC

  8. MRF581G Microsemi Transistor (NOS)

    MRF581G Microsemi Transistor (NOS)

    $3.90

    • Transistor Type: NPN
    • Voltage - Collector Emitter Breakdown (Max): 18V
    • Frequency - Transition: 5GHz
    • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
    • Gain: 13dB ~ 15.5dB
    • Power - Max: 1.25W
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
    • Current - Collector (Ic) (Max): 200mA
    • Operating Temperature: 150°C (TJ)
    • Mounting Type: Surface Mount

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF581G-MSC

  9. MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    $4.90

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
    • Cost Effective Macro X Package
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF559-MSC

  10. MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

    MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
    • Cost Effective PowerMacro Packa
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MRF: APT
    SKU: MRF557-APT

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