Transistors - RF, Mosfets, Misc.

Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

• Guaranteed performance at 400 MHz, 28 Vdc
• Output power = 10 W
• Power gain = 12 dB min.
• Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent input Impedance

MRF: M/A-COM
SKU: MRF134-MA

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

• Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
• 100% ruggedness tested at rated output power
• Low thermal resistance
• Low Crss — 20 pF typ @ VDS = 28 V

MRF: M/A-COM
SKU: MRF175GU-MA

The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

New Old Stock * No longer available for export
MFR: Motorola M/A-COM USA
SKU: MRF151G-MA-M

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

• Enhanced thermal performance
• Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

MFR: M/A-COM
SKU: MRF151A-MA

Designed for power amplifier applications in industrial,  commercial and amateur radio equipment to 175MHz.

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF148A-MA

The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.

The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.

Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts  
Power gain = 17 dB (typical)  
Efficiency = 45% (typical)

Not available for export
MFR: M/A-COM
SKU: MRF154-MA

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

Features guaranteed Performance at 30 MHz, 50 V:

• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability

MFR: M/A-COM
SKU: MRF151-MA

Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode

• Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)
• Facilitates manual gain control, ALC and modulation techniques
• Tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability and ideally suited for Class A operation

MFR: M/A-COM
SKU: MRF158-MA

Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET

• Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 V

MFR: M/A-COM
SKU: MRF160-MA