Transistors - RF, Mosfets, Misc.
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MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
$94.91 As low as: $90.16Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA -
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
$84.91 As low as: $76.62 -
MRF140 M/A-COM Transistor 150W 28V 150 MHz
$125.91Made with original Motorola Die
Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode
- Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40% (Typ.)
- Superior high order IMD
- MD(d3) (150 W PEP): –30 dB (Typ.)
- IMD(d11) (150 W PEP): –60 dB (Typ.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF140-MA -
MRF141G M/A-COM Transistor RF Power FET 300W 175MHz 28V
$265.91 -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
$153.91Out of stock
TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
$307.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V
$109.91 As low as: $99.19 -
MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V
$69.91Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MRF: M/A-COM
SKU: MRF173CQ-MA -
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz
$48.91 As low as: $44.14Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.
MFR: M/A-COM
SKU: MRF173-MA -
MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V
$869.91The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.
The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.
Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts
Power gain = 17 dB (typical)
Efficiency = 45% (typical)Not available for export
MFR: M/A-COM
SKU: MRF154-MA
