Transistors - RF, Mosfets, Misc.
Please click on a subcategory.
-
-
-
MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)
$53.91Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 8 pF @ VDS = 28 V
- Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
- Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)
Parts we have available are early version just after Motorola sold to M/A-COM. All parts in stock are produced with original Motorola die.
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA -
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)
$129.91The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
For a Matched Quad (4), simply order Two Pairs
MFR: Toshiba, Japan
New Old Stock * No Longer Available for Export
SKU: 2SC2782A-MP -
2N3771G ON Semiconductor Transistor NPN 40V 30A (NOS)
$8.91 As low as: $6.91High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.
Features • Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 • These Devices are Pb−Free and are RoHS Compliant
MFR: ON Semiconductors
&nbs2N3771G ON Semiconductor Transistor NPN 40V 30Ap;SKU: 2N3771G-ON
-
2N3055 RCA 60v 15A NPN Silicon Transistor (NOS)
$5.91 -
PN3646 Fairchild NPN Bipolar Transistor (NOS)
$1.91 -
2N5490 GE/RCA NPN Transistor (NOS)
$12.91 -
2N5490 Harris NPN Transistor (NOS)
$10.91 -
2N6246 GE/RCA PNP Transistor 60v 125w 10MHz (NOS)
$18.91
