Transistors - RF, Mosfets, Misc.
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MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V
$594.90The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.
The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.
Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts
Power gain = 17 dB (typical)
Efficiency = 45% (typical)Not available for export
MFR: M/A-COM
SKU: MRF154-MA -
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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
$323.90TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU: MRF150-MA-MQ -
MRF454 Motorola Transistor 80W 12V Matched Quad (4) (NOS)
$319.90 -
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)
$319.90Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF422-MA-MQ -
MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Quad (4) (NOS)
$303.90Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MRF: M/A-COM
SKU: MRF421MQ-MA -
MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)
$279.90Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45%
- Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
ROHS Compliant.
MFR: M/A-COM
SKU: MRF448MP-MA -
MRF450A Motorola NPN Silicon Power Transistor Stud-Mount 50W 30 MHz 12.5V Matched Quad (4) (NOS)
$274.90 -
SRF3662 Motorola Transistor 12.5V 100W Matched Pair (2) (NOS)
$274.90 -