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Transistors - RF, Mosfets, Misc.

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  1. MRF648 / M11L60  Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 60W Matched Pair (2)

    MRF648 / M11L60 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 60W Matched Pair (2)

    $97.91

    Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

    • Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 60 Watts, Minimum Gain = 4.4 dB, Efficiency = 55%
    • Characterized with Series Equivalent Large–Signal Impedance Parameters
    • Built–In Matching Network for Broadband Operation
    • Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–Volt High Line and 20% Overdrive

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF648MP

  2. MRF650 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 50W (NOS)

    MRF650 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 50W (NOS)

    $55.91

    NPN Silicon RF Power Transistor 12.5V 470 MHz 50W
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF650

  3. MRF650 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 50W Matched Pair (2) (NOS)

    MRF650 Motorola NPN Silicon RF Power Transistor 12.5V 470 MHz 50W Matched Pair (2) (NOS)

    $111.91

    Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

    New Old Stock * No longer available for export
    MFR: MRF650MP
    SKU: MRF650MP

  4. MRF654 Motorola NPN Silicon RF Power Transistor 12.5V 512 MHz 15W (NOS)

    MRF654 Motorola NPN Silicon RF Power Transistor 12.5V 512 MHz 15W (NOS)

    $29.91

    Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

    • Specified 12.5 Volt, 512 MHz Characteristics: Output Power = 15 W, Minimum Gain = 7.8 dB, Efficiency = 55%
    • Built–In Matching Network for Broadband Operation
    • Gold Metallized, Emitter Ballasted for Long Life and Reliability
    • Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF654

  5. MRF660 Motorola NPN Silicon RF Power Transistor 12.5V 470MHz 7W (NOS)

    MRF660 Motorola NPN Silicon RF Power Transistor 12.5V 470MHz 7W (NOS)

    $21.91

    Designed for 12.5 Volt UHF large signal power amplifier applications in industrial and commercial FM equipment.

    • Specified 12.5 Volt, 470 MHz Performance — Output Power = 7.0 Watts, Minimum Power Gain = 5.4 dB, Efficiency = 60% Min
    • Low Cost Common Emitter TO-220AB Package
    • Load Mismatch Capability at High Line and RF Input Overdrive

    New Old Stock * No longer available for export
    MFR: Motorola

     

  6. MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)

    MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)

    $6.91

    Depletion mode dual-gate MES FET designed for high frequency amplifier and mixer applications.

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF966

  7. MRF630 Microsemi RF Power Transistor NPN Silicon 12.5 V 470 MHz 3.0 W (NOS)

    MRF630 Microsemi RF Power Transistor NPN Silicon 12.5 V 470 MHz 3.0 W (NOS)

    $9.91

    Designed for 12.5 Volt UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF630-MSC

  8. 2SK410  Transistor, Fet, Hitachi

    2SK410 Transistor, Fet, Hitachi

    $59.95

    2SK410  Transistor, Fet, Hitachi

  9. 2SJ106 Toshiba Field Effect Transistor Silicon P-Channel Junction Type (NOS)

    2SJ106 Toshiba Field Effect Transistor Silicon P-Channel Junction Type (NOS)

    $1.91

    For Audio Frequency Amplifier applications, Analog Switch applications, Constant Current applications, and Impedance Converter applications.

    • High Breakdown Voltage: VGDS=50V
    • Maximum Ratings (Ta-25°C)

    New Old Stock
    MFR: Toshiba Electronics
    SKU: 2SJ106

  10. 2SJ210 NEC MOS Field Effect Transistor (NOS)

    2SJ210 NEC MOS Field Effect Transistor (NOS)

    $3.91

    The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 volt power source.
    Has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits.

    New Old Stock
    MFR: NEC
    SKU: 2SJ210

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