Transistors - RF, Mosfets, Misc.
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NTE320 NTE Silicon NPN RF Power Transistor 40W @ 175MHz (NOS)
$28.60 -
NTE338 NTE Silicon NPN Transistor (NOS)
$31.90 -
NTE351 NTE Silicon NPN Transistor 175MHz (NOS)
$27.90 -
NTE356 NTE Transistor (NOS)
$37.90 -
2SC2101 Toshiba Silicon NPN Power Transistor (NOS)
$24.91 -
2SC2102 Toshiba Silicon NPN Epitaxial Transistor (NOS)
$24.91 -
2SC2290 Toshiba Transistor Early version Single (1) (NOS)
$62.91The 2SC2290 transistor offers high gain and high power output, making it suitable for use in high-frequency power amplifier circuits. It also features a low input capacitance, which allows it to operate at higher frequencies than many other transistors. Additionally, the transistor has a compact and lightweight design, making it easy to integrate into various electronic devices and systems.
The 2SC2290 transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and compact design make it a popular choice for use in various RF power amplifier circuits.
The early version of the 2SC2290 transistor was a single transistor package. This version was commonly used in a variety of applications, such as in citizen band (CB) radios, linear amplifiers, and other high-frequency communication systems.
Silicon NPN Power Transistor Epitaxial Planar Type (Early Version) (NOS)
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2290 -
2SC2290A Toshiba Transistor "Red Dot" Pb Free RoHS Compliant Single (1) (NOS)
$59.91The 2SC2290A is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is an improved version of the 2SC2290 transistor, featuring enhancements such as reduced on-resistance and improved linearity.
The 2SC2290A transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and lead-free and RoHS compliant design make it a popular choice for use in various RF power amplifier circuits.
Silicon NPN Epitaxial Planar Type 2-30 MHz SSB Linear Power Amplifier Applications, Low Supply Voltage Use
- Specified 12.5V, 28MHz Characteristics
- Output Power : Po=60W PEP
- Power Gain : Gp=11.8dB (Min)
- Collector Efficiency : C = 35% (Min)
- Intermodulation Distortion : IMD = - 30dB (Max)
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2290A
