1-800-RFPARTS (1-800-737-2787) 1-760-744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

MRF/SRF/M Series

List  Grid 

per page
Set Ascending Direction
  1. MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

    $869.91

    The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.

    The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.

    Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
    N–Channel enhancement mode MOSFET.
    Specified 50 volts
    30 MHz characteristics
    Output power = 600 watts  
    Power gain = 17 dB (typical)  
    Efficiency = 45% (typical)

    Not available for export
    MFR: M/A-COM
    SKU: MRF154-MA

  2. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)

    $439.91

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF422MQ-MA

  3. MRF454 M/A-COM NPN Silicon Power Transistor 80W 30 MHz 12.5V Matched Quad (4)

    MRF454 M/A-COM NPN Silicon Power Transistor 80W 30 MHz 12.5V Matched Quad (4)

    $311.91

    Out of stock

    MRF454 M/A-COM NPN Silicon Power Transistor 80 Watt 30 MHz 12.5 Volt Matched Quad (4) (NOS)

    Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.

    •  Specified 12.5 V, 30 MHz characteristics
    •  Output power = 80 W
    •  Minimum gain = 12 dB
    •  Efficiency = 50%

    MFR: M/A-COM
    SKU: MRF454-MA-MQ

  4. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    $307.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  5. MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)

    MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)

    $279.91

    Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45% 
    • Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 3:1 VSWR

    ROHS Compliant.
    MFR: M/A-COM
    SKU: MRF448MP-MA

  6. MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    $265.91

    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Operating Frequency: 175 MHz
    • Gain: 12 Db
    • Output Power: 300 W

    MFR: MA/COM
    SKU: MRF141G-MA

  7. MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)

    MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)

    $257.91

    Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MFR: MA/COM
    SKU: MRF428MP-MA

  8. MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

    MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

    $243.91

    Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

    • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
    • 100% tested for load mismatch at all phase angles with VSWR 30:1
    • Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
    • Simplified AVC, ALC and modulation
    • Typical data for power amplifiers in industrial and commercial applications:
    • Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
    • Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

    MRF: M/A-COM
    MRF275G-MA

  9. MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM
    SKU: MRF422-MP-MA

  10. MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)

    $219.91

    Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MRF: M/A-COM
    SKU: MRF421MP-MA

Items 1 to 10 of 47 total

Page:
  1. 1
  2. 2
  3. 3
  4. 4
  5. 5