MRF/SRF/M Series
Please choose from the following MRF Sub-Catagory choices:
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MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V
$869.91The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.
The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.
Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts
Power gain = 17 dB (typical)
Efficiency = 45% (typical)Not available for export
MFR: M/A-COM
SKU: MRF154-MA -
MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V Matched Quad (4)
$439.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: M/A-COM
SKU: MRF422MQ-MA -
MRF454 M/A-COM NPN Silicon Power Transistor 80W 30 MHz 12.5V Matched Quad (4)
$311.91Out of stock
MRF454 M/A-COM NPN Silicon Power Transistor 80 Watt 30 MHz 12.5 Volt Matched Quad (4) (NOS)
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics
- Output power = 80 W
- Minimum gain = 12 dB
- Efficiency = 50%
MFR: M/A-COM
SKU: MRF454-MA-MQ -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
$307.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
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MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)
$279.91Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45%
- Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
ROHS Compliant.
MFR: M/A-COM
SKU: MRF448MP-MA -
MRF141G M/A-COM RF Power FET 300W 175MHz 28V
$265.91 -
MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)
$257.91Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
- Specified 50 V, 30 MHz Characteristics — Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
- Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW
MFR: MA/COM
SKU: MRF428MP-MA -
MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V
$243.91Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode
- Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
- 100% tested for load mismatch at all phase angles with VSWR 30:1
- Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
- Simplified AVC, ALC and modulation
- Typical data for power amplifiers in industrial and commercial applications:
- Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
- Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%
MRF: M/A-COM
MRF275G-MA -
MRF422 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 28 V
$219.91 As low as: $157.91Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MFR: MA/COM
SKU: MRF422-MP-MA -
MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V Matched Pair (2) (NOS)
$219.91Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
- Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
MRF: M/A-COM
SKU: MRF421MP-MA