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MRF/SRF/M Series

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  1. MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

    MRF557 APT RF and Microwave Discrete Low Power Transistor 12.5 V 870 MHz 1.5 W (NOS)

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = 1.5 W, Minimum Gain = 8 dB, Efficiency 60% (Typ)
    • Cost Effective PowerMacro Packa
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MRF: APT
    SKU: MRF557-APT

  2. MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    MRF559 Microsemi RF and Microwave Discrete Low Power Transistor 0.5W 870 MHz 12V (NOS)

    $4.91

    Designed primarily for wideband large signal stages in the UHF frequency range.

    • Specified @ 12.5 V, 870 MHz Characteristics: Output Power = .5 W, Minimum Gain = 8.0 dB, Efficiency 50%
    • Cost Effective Macro X Package
    • Electroless Tin Plated Leads for Improved Solderability

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF559-MSC

  3. MRF581G Microsemi Transistor (NOS)

    MRF581G Microsemi Transistor (NOS)

    $3.91

    • Transistor Type: NPN
    • Voltage - Collector Emitter Breakdown (Max): 18V
    • Frequency - Transition: 5GHz
    • Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
    • Gain: 13dB ~ 15.5dB
    • Power - Max: 1.25W
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
    • Current - Collector (Ic) (Max): 200mA
    • Operating Temperature: 150°C (TJ)
    • Mounting Type: Surface Mount

    No longer manufactured
    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF581G-MSC

  4. MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)

    MRF586 Microsemi RF & Microwave Discrete Low Power NPN Silicon Transistor (NOS)

    $6.91

    Designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.

    • Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA
    • GU max= 12.5dB (typ) @ 300 MHz, 15v, 40mA
    • |S21|2= 12.5dB (typ) @ 300 MHz, 15v, 40mA

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF586-MSC

  5. MRF5943C Microsem RF & Microwave Discrete Low Power Transistor  (NOS)

    MRF5943C Microsem RF & Microwave Discrete Low Power Transistor (NOS)

    Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

    • Low Noise - 2.5 dB @ 500 MHZ
    • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
    • Ftau - 5.0 GHz @ 10v, 75mA
    • Cost Effective MacroX Package

    New Old Stock * No longer available for export
    MRF: Microsemi
    SKU: MRF5943C-MSC
     

  6. MRF5943G APT RF & Microwave Discrete Low Power Transistor (NOS)

    MRF5943G APT RF & Microwave Discrete Low Power Transistor (NOS)

    Designed for general-purpose RF amplifier applications, such as pre-drivers, drivers, and oscillator.

    • Low Cost SO-8 Plastic Surface Mount Package
    • S-Parameter Characterization
    • Maximum Available Gain: 17dB @ 300MHz

    New Old Stock * No longer available for export
    MFR: Advanced Power Technology RF (APTRF)
    SKU: MRF5943G-APT

  7. MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)

    MRF5943 Microsemi RF & Microwave Discrete Low Power Transistor (NOS)

    $2.91

    Designed for general-purpose RF amplifier applications, such as; pre-drivers, drivers, Oscillators, etc.

    • Maximum Available Gain = 17dB @ 300MHz

    New Old Stock * No longer available for export
    MFR: Microsemi

  8. MRF545 APT RF and Microwave Discrete Low Power Transistor (NOS)

    MRF545 APT RF and Microwave Discrete Low Power Transistor (NOS)

    $4.91

    Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

    • Silicon PNP, high Frequency, high breakdown, Transistor
    • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
    • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
    • High FT - 1400 MHz

    New Old Stock * No longer available for export
    MFR: Advanced Power Technology RF
    SKU: MRF545-APT

  9. MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)

    MRF544 APT NPN Silicon RF and Microwave Discrete Low Power Transistor (NOS)

    Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.

    • Silicon NPN, high Frequency, high breakdown Transistor
    • Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz
    • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
    • High FT - 1400 MHz

    New Old Stock * No longer available for export
    MFR: APT

  10. MRF517 Microsemi NPN Silicon RF and Microwave Discrete Low Power Transistor

    MRF517 Microsemi NPN Silicon RF and Microwave Discrete Low Power Transistor

    $7.91

    MRF517 NPN Silicon RF and Microwave Discrete Low Power Transistor

    New Old Stock
    MFR: Microsemi
    SKU: MRF517-MSC

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