MRF/SRF/M Series
Please choose from the following MRF Sub-Catagory choices:
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MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
$66.90Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$80.90MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
$62.90 As low as: $56.77 -
MRF136 M/A-COM Transistor 15 watt 28v 400 MHz
$29.90 As low as: $28.40Designed for wideband large signal amplifier and oscillator applications Up to 400 MHz range, in single-ended configuration N–Channel enhancement mode
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• Guaranteed 28 volt, 150 MHz performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency = 60% (Typ.)
• Small– and large–signal characterization
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability, ideally suited for Cass A operation
• Facilitates manual gain control, ALC and modulation techniquesMFR: M/A-COM
SKU: MRF136-MA -
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
$94.91 As low as: $90.16Made with original Motorola Die
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
- Guaranteed performance at 400 MHz, 28 Vdc
- Output power = 10 W
- Power gain = 12 dB min.
- Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
MRF: M/A-COM
SKU: MRF134-MA -
MRF141G M/A-COM RF Power FET 300W 175MHz 28V
$249.90 -
MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
$118.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151A-MA -
MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V
$46.91 As low as: $44.56Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET- Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
MFR: M/A-COM
SKU: MRF160-MA -
MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz
$159.90 As low as: $151.91Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
MRF: M/A-COM
SKU: MRF175GU-MA -
MRF176GU Motorola Transistor RF MOSFET 200/150W 500MHz 50V (NOS)
$159.90Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF176GU-MOT