MRF/SRF/M Series

Made with original Motorola Die

Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.

• Guaranteed performance at 400 MHz, 28 Vdc
• Output power = 10 W
• Power gain = 12 dB min.
• Efficiency = 50% min.
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Gold metallization system for high reliability
• Computer–controlled wirebonding gives consistent input Impedance

MRF: M/A-COM
SKU: MRF134-MA

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles

Applications

• Aerospace and Defense
• ISM 

MFR: M/A-COM
SKU: MRF150-MA-MQ

Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET

MFR: M/A-COM
SKU: MRF166W-MA

Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET

• Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz

MFR: M/A-COM
SKU: MRF174-MA

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

MFR: M/A-COM
SKU: MRF176GV-MA

• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability
• Operating Frequency: 175 MHz
• Gain: 12 Db
• Output Power: 300 W

MFR: MA/COM
SKU: MRF141G-MA

Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET

• Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 V

MFR: M/A-COM
SKU: MRF160-MA

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.

MFR: M/A-COM
SKU: MRF173-MA

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175LU-MA