Transistors - RF, Mosfets, Misc.
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MRF141G M/A-COM RF Power FET 300W 175MHz 28V
$265.91 -
MRF151 M/A-COM RF Power Field-Effect MOSFET Transistor 150W 50V 175 MHz N-Channel Broadband
$79.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Features guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151-MA -
MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)
$179.91The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
New Old Stock * No longer available for export
MFR: Motorola M/A-COM USA
SKU: MRF151G-MA-M -
MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
$118.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151A-MA -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$80.91MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)
$63.91 As low as: $60.71 -
MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
$69.91 As low as: $64.95Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
- Guaranteed performance at 30 MHz, 28V: Output power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%
- Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB
- Low thermal resistance
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA -
MRF1946A Motorola NPN Silicon Power Transistor Stud Mount 30 Watt 10 dB 12.5 Volt 175 MHz Matched Pair (2) (NOS)
$109.91Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.
- High Common Emitter Power Gain
- Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
- Diffused Emitter Resistor Ballasting
- Characterized to 220 MHz
- Load Mismatch at High Line and Overdrive Conditions
New Old Stock * No longer available for export
MFR: Motorola
SKU: MFR1946A-MP -
MRF227 Microsemi NPN Silicon RF Power Transistor 12.5 V 225 MHz 3W
$6.91 As low as: $5.61Designed for 12.5 Volt VHF large-signal power amplifier applications in communication equipment operating at 225 MHz. Ideally suited for Class E citizens band radio.
- Specified 12.5 Volt, 225 MHz Characteristics- Output Power= 3.0 W, Minimum Gain= 13.5 dB, efficiency= 60%
New Old Stock * No longer available for export
MFR: Microsemi
SKU: MRF227-MSC -
MRF224 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 40W (Tested) (NOS)
$53.91Designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to 300 MHz.
- Specified 12.5 Volt, 175 MHz Characteristics- Output Power= 40 W, Minimum Gain= 4.5 dB, efficiency= 70%
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF224