Transistors - RF, Mosfets, Misc.
Please click on a subcategory.
-
RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)
$23.91Silicon MOSFET Power Transistor 520MHz 30W RoHS Compliant
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: R30HUF1See possible substitutes: RD35HUP2 or RD35HUF2
-
RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)
$29.91 -
RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000
$59.91DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.Finals used in the HF/50 MHz section of the Icom IC-7000 transmitter.
New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1 -
RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000
$37.91 As low as: $36.01The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.
The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.
Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W (NOS)
MFR #: RD70HVF1-101
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD70HVF1Finals used in the 144 MHz section of the Icom IC-7000 transmitter.
See Data Sheet for more information
-
MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)
$19.91MGF1302 Mitsubishi Low-Noise GaAs FET (NOS)
The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
New Old Stock * No longer available for export
MFR: Mitsubishi -
2SC4524 Mitsubishi Silicon NPN Epitaxial Planar Transistor (NOS)
$29.91 -
-
2SC3001 Mitsubishi NPN Epitaxial Planar Transistor (NOS)
$19.95 As low as: $15.95 -
2SC3020 Silicon Epitaxial Planar NPN Transistor
$17.50 As low as: $16.95 -
2SC3379 Mitsubishi Silicon NPN Epitaxial Planar Transistor (NOS)
