MRF/SRF/M Series
Please choose from the following MRF Sub-Catagory choices:
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MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET
$159.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Features guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMRF: MA/COM
SKU: MRF151MP-MA -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
$161.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU:MRF150-MA-MP -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
$323.91TMOS Designed primarily for linear large-signal output stages up to 150 MHz.
• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
MFR: M/A-COM
SKU: MRF150-MA-MQ -
MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
$118.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Enhanced thermal performance
• Higher power dissipation Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40% Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151A-MA -
MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)
$179.91The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
New Old Stock * No longer available for export
MFR: Motorola M/A-COM USA
SKU: MRF151G-MA-M -
MRF151 M/A-COM RF Power Field-Effect MOSFET Transistor 150W 50V 175 MHz N-Channel Broadband
$79.91Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Features guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced ReliabilityMFR: M/A-COM
SKU: MRF151-MA -
MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V
$869.91The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.
The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.
Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts
Power gain = 17 dB (typical)
Efficiency = 45% (typical)Not available for export
MFR: M/A-COM
SKU: MRF154-MA -
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
$84.91 As low as: $76.62 -
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
$80.91MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COMTMOS Designed primarily for linear large-signal output stages up to 150 MHz.• Superior high order IMD IMD(d3) (150W PEP): –32dB (Typ.) IMD(d11) (150W PEP): –60dB (Typ.)
• Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ.) Efficiency = 45% (Typ.)
• 100% tested for load mismatch at all phase anglesApplications
- Aerospace and Defense
- ISM
SKU: MRF150-MA
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MRF137 M/A-COM Transistor 30W 28V 400 MHz
$51.91Designed for wideband large signal output and drive stages Product Image up to 400 MHz range. N–Channel enhancement mode
• Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniquesLimit, 10 per customer.
MFR: M/A-COM
