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  1. RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)

    RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)

    $31.91

    RoHS Compliance Silicon MOSFET Power Transistor 900MHz 20W
    New Old Stock * No longer available for export
    MFR: Mitsubishi
    SKU: RD20HMF1

  2. RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)

    RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)

    $23.91

    Silicon MOSFET Power Transistor 520MHz 30W RoHS Compliant
    New Old Stock * No longer available for export
    MFR: Mitsubishi 
    SKU: R30HUF1

    See possible substitutes: RD35HUP2 or RD35HUF2

  3. RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)

    RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)

    $29.91

    RoHS Compliant Silicon MOSFET Power Transistor 900MHz 45W 12.5V
    New Old Stock * No longer avilable for export
    MFR: Mitsubishi 
    SKU: RD45HMF1

  4. RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000

    RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000

    $59.91

    DESCRIPTION
    RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
    FEATURES
    High power and High Gain:  Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz  High Efficiency: 60%typ.on HF Band
    APPLICATION
    For output stage of high power amplifiers in HF
    Band mobile radio sets.
    RoHS COMPLIANT
    RD70HHF1-101 is a RoHS compliant products.  RoHS compliance is indicate by the letter “G” after the lot marking.

    Finals used in the HF/50 MHz section of the Icom IC-7000 transmitter.

    New Old Stock * No longer available for export * End Of Life 2017
    MFR: Mitsubishi, Japan
    SKU: RD70HHF1

  5. RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000

    RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000

    $37.91 As low as: $36.01

    The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.

    The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.

    Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W  (NOS)

    MFR #: RD70HVF1-101

    New Old Stock * No longer available for export
    MFR: Mitsubishi
    SKU: RD70HVF1

    Finals used in the 144 MHz section of the Icom IC-7000 transmitter.

    See Data Sheet for more information

  6. RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    $49.91 As low as: $42.79

    Transistor 70 Watts 520 MHz 12.5 Volts

    This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant

    MFR #: RD70HUF2-501
    MFR: Mitsubishi
    SKU: RD70HUF2

  7. RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

    RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

    $14.91 As low as: $12.76

    MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
    RoHS Compliant
    MFR #: RD15HVF1-501
    MFR: Mitsubishi, Japan
    SKU: RD15HVF1-501

    EOL 12/2022

  8. RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

    RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

    $54.91 As low as: $44.72

    The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.

    The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.

    Will replace the original RD100HHF1-101.

    MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
    RoHS Compliant
    MFR: Mitsubishi
    Made in Japan
    SKU: RD100HHF1C-501

    Data Sheet

  9. RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

    RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

    $39.91 As low as: $37.91

    Out of stock

    Popular part used in Icom 7300.

    RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 

    High power and High Gain:
    Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
    Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
    High Efficiency: 60%typ.on VHF Band
    High Efficiency: 55%typ.on UHF Band
    Integrated gate protection diode

    RoHS Compliant
    MFR: Mitsubishi
    SKU: RD70HVF1C-501

    See Data Sheet for more information

  10. RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V

    RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V

    $26.91 As low as: $23.07

    RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

    • High Power and High Efficiency Pout=75Wtyp
    • Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
    • Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
    • Integrated gate protection diode.

    RoHS Compliant
    MFR: Mitsubishi
    SKU: RD70HUP2-501

    See Data Sheet

Items 51 to 60 of 60 total

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