RD
Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.
PART NUMBER | Vdd (V) | f (MHz) | Pout(W) | Package |
RD00HHS1 * | 12.5 | 30 | 0.3 | SOT-89 |
RD00HVS1 * | 1.5 | 175 | 0.5 | SOT-89 |
RD01MUS1 * | 7.2 | 520 | 0.8 | SOT-89 |
RD01MUS2 | 7.2 | 520 | 0.8 | SOT-89 |
RD01MUS2B * | 7.2 | 527 | 1 | SOT-89 |
RD02MUS1 * | 7.2 | 175 / 520 | 2 | SOT-89 |
RD02MUS1B * | 7.2 | 175 / 520 | 2 | SOT-89 |
RD05MMP1 | 7.2 | 941 | 5.5 | PMM |
RD06HHF1 | 12.5 | 30 | 6 | TO-220S |
RD06HVF1 | 12.5 | 175 | 6 | TO-220S |
RD07MUS2B | 7.2 | 175 / 527 / 870 | 7 | SLP |
RD07MVS1 | 7.2 | 175 / 520 | 7 | SLP |
RD07MVS1B * | 7.2 | 175 / 520 | 7 | SLP |
RD07MVS2 * | 7.2 | 175 / 520 | 7 | SLP |
RD09MUP2 | 7.2 | 520 | 8 | PMM |
RD100HHF1 | 12.5 | 30 | 100 | CERAMIC (LARGE) |
RD12MVS1 | 7.2 | 175 | 11.5 | SLP |
RD15HVF1 | 12.5 | 175 | 15 | TO-220S |
RD16HHF1 | 12.5 | 30 | 16 | TO-220S |
RD20HMF1 * | 12.5 | 900 | 20 | CERAMIC (SMALL) |
RD30HVF1 * | 12.5 | 175 | 30 | CERAMIC (SMALL) |
RD30HUF1 * | 12.5 | 520 | 30 | CERMAIC (SMALL) |
RD35HUF2 | 12.5 | 175 / 530 | 45 / 43 TYP. | HPM |
RD35HUP2 | 12.5 | 175 / 530 | 35 | HPM |
RD45HMF1 * | 12.5 | 900 | 45 | CERAMIC (LARGE) |
RD60HUF1 | 12.5 | 520 | 60 | CERAMIC ( LARGE) |
RD70HUF2 | 12.5 | 175 / 530 | 84 / 75 TYP. | HPM |
RD70HVF1 | 12.5 | 175 / 520 | 70 / 50 | CERAMIC (LARGE) |
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RD12MVS1-T112 Mitsubishi Transistor (NOS)
$9.91 -
RD07MVS1 Mitsubishi MOSFET Power Transistor Mitsubishi 175MHz 520MHz 7W (NOS)
$12.91 -
RD06HHF1-101 Mitsubishi Transistor 6W 30 MHz 12.5V (NOS)
$13.91 -
RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
$14.91 As low as: $12.76 -
RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W (NOS)
$19.91 -
RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)
$23.91Silicon MOSFET Power Transistor 520MHz 30W RoHS Compliant
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: R30HUF1See possible substitutes: RD35HUP2 or RD35HUF2
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RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V
$24.91 As low as: $21.37RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High Power and High Efficiency Pout=75Wtyp
- Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
- Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
- Integrated gate protection diode.
RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501See Data Sheet
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RD35HUP2-501 Mitsubishi Transistor 35 Watt 175/530MHz 12.5 Volts
$28.91 -
RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)
$29.91 -
RD60HUF1 Mitsubishi Transistor 60 Watt 520 MHz 12.5V
$29.91 As low as: $28.50RoHS Compliance, Silicon MOSFET Power Transistor 520MHz, 60W
MFR: Mitsubishi (MFR #: RD60HUF1-101)
SKU: RD60HUF1See substitute RD60HUF1C