RD
Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.
| PART NUMBER | Vdd (V) | f (MHz) | Pout(W) | Package |
| RD00HHS1 * | 12.5 | 30 | 0.3 | SOT-89 |
| RD00HVS1 * | 1.5 | 175 | 0.5 | SOT-89 |
| RD01MUS1 * | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2 | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2B * | 7.2 | 527 | 1 | SOT-89 |
| RD02MUS1 * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD02MUS1B * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD05MMP1 | 7.2 | 941 | 5.5 | PMM |
| RD06HHF1 | 12.5 | 30 | 6 | TO-220S |
| RD06HVF1 | 12.5 | 175 | 6 | TO-220S |
| RD07MUS2B | 7.2 | 175 / 527 / 870 | 7 | SLP |
| RD07MVS1 | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS1B * | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS2 * | 7.2 | 175 / 520 | 7 | SLP |
| RD09MUP2 | 7.2 | 520 | 8 | PMM |
| RD100HHF1 | 12.5 | 30 | 100 | CERAMIC (LARGE) |
| RD12MVS1 | 7.2 | 175 | 11.5 | SLP |
| RD15HVF1 | 12.5 | 175 | 15 | TO-220S |
| RD16HHF1 | 12.5 | 30 | 16 | TO-220S |
| RD20HMF1 * | 12.5 | 900 | 20 | CERAMIC (SMALL) |
| RD30HVF1 * | 12.5 | 175 | 30 | CERAMIC (SMALL) |
| RD30HUF1 * | 12.5 | 520 | 30 | CERMAIC (SMALL) |
| RD35HUF2 | 12.5 | 175 / 530 | 45 / 43 TYP. | HPM |
| RD35HUP2 | 12.5 | 175 / 530 | 35 | HPM |
| RD45HMF1 * | 12.5 | 900 | 45 | CERAMIC (LARGE) |
| RD60HUF1 | 12.5 | 520 | 60 | CERAMIC ( LARGE) |
| RD70HUF2 | 12.5 | 175 / 530 | 84 / 75 TYP. | HPM |
| RD70HVF1 | 12.5 | 175 / 520 | 70 / 50 | CERAMIC (LARGE) |
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RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000
$59.91DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.Finals used in the HF/50 MHz section of the Icom IC-7000 transmitter.
New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1 -
RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000
$37.91 As low as: $36.01The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.
The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.
Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W (NOS)
MFR #: RD70HVF1-101
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD70HVF1Finals used in the 144 MHz section of the Icom IC-7000 transmitter.
See Data Sheet for more information
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RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)
$31.91 -
RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor 16W 30 MHz 12.5V
$8.91 As low as: $7.26RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.
he RD16HHF1-501 is a reliable and efficient power transistor that offers a good balance of power handling and frequency range. It is a popular choice for use in a variety of applications, such as in amateur radio and other communication systems where reliable and efficient power amplification is required.
FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.MFR: Mitsubishi, Japan
SKU: RD16HHF1-501EOL 12/2022
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RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W (NOS)
$14.91 As low as: $14.16 -
RD01MUS1-T113 Mitsubishi Transistor (NOS)
$1.91 -
RD01MUS2 Mitsubishi Transistor (NOS)
$1.91 -
RD02MUS1-T112 Mitsubishi Transistor (NOS)
$4.91 -
RD06HHF1-101 Mitsubishi Transistor 6W 30 MHz 12.5V (NOS)
$13.91 -
RD06HVF1 Mitsubishi Transistor 6W 175 MHz 12.5V (NOS)
$9.91
