RD
Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.
PART NUMBER | Vdd (V) | f (MHz) | Pout(W) | Package |
RD00HHS1 * | 12.5 | 30 | 0.3 | SOT-89 |
RD00HVS1 * | 1.5 | 175 | 0.5 | SOT-89 |
RD01MUS1 * | 7.2 | 520 | 0.8 | SOT-89 |
RD01MUS2 | 7.2 | 520 | 0.8 | SOT-89 |
RD01MUS2B * | 7.2 | 527 | 1 | SOT-89 |
RD02MUS1 * | 7.2 | 175 / 520 | 2 | SOT-89 |
RD02MUS1B * | 7.2 | 175 / 520 | 2 | SOT-89 |
RD05MMP1 | 7.2 | 941 | 5.5 | PMM |
RD06HHF1 | 12.5 | 30 | 6 | TO-220S |
RD06HVF1 | 12.5 | 175 | 6 | TO-220S |
RD07MUS2B | 7.2 | 175 / 527 / 870 | 7 | SLP |
RD07MVS1 | 7.2 | 175 / 520 | 7 | SLP |
RD07MVS1B * | 7.2 | 175 / 520 | 7 | SLP |
RD07MVS2 * | 7.2 | 175 / 520 | 7 | SLP |
RD09MUP2 | 7.2 | 520 | 8 | PMM |
RD100HHF1 | 12.5 | 30 | 100 | CERAMIC (LARGE) |
RD12MVS1 | 7.2 | 175 | 11.5 | SLP |
RD15HVF1 | 12.5 | 175 | 15 | TO-220S |
RD16HHF1 | 12.5 | 30 | 16 | TO-220S |
RD20HMF1 * | 12.5 | 900 | 20 | CERAMIC (SMALL) |
RD30HVF1 * | 12.5 | 175 | 30 | CERAMIC (SMALL) |
RD30HUF1 * | 12.5 | 520 | 30 | CERMAIC (SMALL) |
RD35HUF2 | 12.5 | 175 / 530 | 45 / 43 TYP. | HPM |
RD35HUP2 | 12.5 | 175 / 530 | 35 | HPM |
RD45HMF1 * | 12.5 | 900 | 45 | CERAMIC (LARGE) |
RD60HUF1 | 12.5 | 520 | 60 | CERAMIC ( LARGE) |
RD70HUF2 | 12.5 | 175 / 530 | 84 / 75 TYP. | HPM |
RD70HVF1 | 12.5 | 175 / 520 | 70 / 50 | CERAMIC (LARGE) |
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RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
$14.91 As low as: $12.76 -
RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W (NOS)
$19.91 -
RD12MVS1-T112 Mitsubishi Transistor (NOS)
$9.91 -
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
$54.91 As low as: $47.08The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.
The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.
MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi, Japan
SKU: RD100HHF1C-501 -
RD09MUP2-501 Mitsubishi Transistor
$6.91 -
RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)
$8.91 -
RD07MVS1B Mitsubishi Transistor (NOS)
$8.91 -
RD07MVS1 Mitsubishi MOSFET Power Transistor Mitsubishi 175MHz 520MHz 7W (NOS)
$12.91 -
RD07MUS2B Mitsubishi Transistor (NOS)
$6.91 -
RD06HVF1 Mitsubishi Transistor 6W 175 MHz 12.5V (NOS)
$9.91