RD
Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.
| PART NUMBER | Vdd (V) | f (MHz) | Pout(W) | Package |
| RD00HHS1 * | 12.5 | 30 | 0.3 | SOT-89 |
| RD00HVS1 * | 1.5 | 175 | 0.5 | SOT-89 |
| RD01MUS1 * | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2 | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2B * | 7.2 | 527 | 1 | SOT-89 |
| RD02MUS1 * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD02MUS1B * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD05MMP1 | 7.2 | 941 | 5.5 | PMM |
| RD06HHF1 | 12.5 | 30 | 6 | TO-220S |
| RD06HVF1 | 12.5 | 175 | 6 | TO-220S |
| RD07MUS2B | 7.2 | 175 / 527 / 870 | 7 | SLP |
| RD07MVS1 | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS1B * | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS2 * | 7.2 | 175 / 520 | 7 | SLP |
| RD09MUP2 | 7.2 | 520 | 8 | PMM |
| RD100HHF1 | 12.5 | 30 | 100 | CERAMIC (LARGE) |
| RD12MVS1 | 7.2 | 175 | 11.5 | SLP |
| RD15HVF1 | 12.5 | 175 | 15 | TO-220S |
| RD16HHF1 | 12.5 | 30 | 16 | TO-220S |
| RD20HMF1 * | 12.5 | 900 | 20 | CERAMIC (SMALL) |
| RD30HVF1 * | 12.5 | 175 | 30 | CERAMIC (SMALL) |
| RD30HUF1 * | 12.5 | 520 | 30 | CERMAIC (SMALL) |
| RD35HUF2 | 12.5 | 175 / 530 | 45 / 43 TYP. | HPM |
| RD35HUP2 | 12.5 | 175 / 530 | 35 | HPM |
| RD45HMF1 * | 12.5 | 900 | 45 | CERAMIC (LARGE) |
| RD60HUF1 | 12.5 | 520 | 60 | CERAMIC ( LARGE) |
| RD70HUF2 | 12.5 | 175 / 530 | 84 / 75 TYP. | HPM |
| RD70HVF1 | 12.5 | 175 / 520 | 70 / 50 | CERAMIC (LARGE) |
-
RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V
$26.91 As low as: $23.07RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High Power and High Efficiency Pout=75Wtyp
- Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
- Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
- Integrated gate protection diode.
RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501See Data Sheet
-
RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
$39.91 As low as: $37.91Out of stock
Popular part used in Icom 7300.
RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diodeRoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501See Data Sheet for more information
-
RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
$14.91 As low as: $12.76 -
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
$54.91 As low as: $44.72The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.
The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.
Will replace the original RD100HHF1-101.
MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501 -
RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
$49.91 As low as: $42.79 -
RD30HUF1-101 Mitsubishi Transistor 30 Watt 520 MHz 12.5V (NOS)
$23.91Silicon MOSFET Power Transistor 520MHz 30W RoHS Compliant
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: R30HUF1See possible substitutes: RD35HUP2 or RD35HUF2
-
RD45HMF1-101 Mitsubishi Transistor 45 Watt 900 MHz 12.5V (NOS)
$29.91 -
RD70HHF1 Mitsubishi Silicon MOSFET Power Transistor 70W 30 MHz 12.5V (NOS) Icom IC-7000
$59.91DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.
FEATURES
High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
RoHS COMPLIANT
RD70HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.Finals used in the HF/50 MHz section of the Icom IC-7000 transmitter.
New Old Stock * No longer available for export * End Of Life 2017
MFR: Mitsubishi, Japan
SKU: RD70HHF1 -
RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS) Icom IC-7000
$37.91 As low as: $36.01The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.
The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.
Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W (NOS)
MFR #: RD70HVF1-101
New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: RD70HVF1Finals used in the 144 MHz section of the Icom IC-7000 transmitter.
See Data Sheet for more information
-
RD20HMF1 Mitsubishi Transistor 20 Watt 900 MHz 12.5V (NOS)
$31.91
