RD

Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.

* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.

PART NUMBER	Vdd (V)	f (MHz)	Pout(W)	Package
RD00HHS1 *	12.5	30	0.3	SOT-89
RD00HVS1 *	1.5	175	0.5	SOT-89
RD01MUS1 *	7.2	520	0.8	SOT-89
RD01MUS2	7.2	520	0.8	SOT-89
RD01MUS2B *	7.2	527	1	SOT-89
RD02MUS1 *	7.2	175 / 520	2	SOT-89
RD02MUS1B *	7.2	175 / 520	2	SOT-89
RD05MMP1	7.2	941	5.5	PMM
RD06HHF1	12.5	30	6	TO-220S
RD06HVF1	12.5	175	6	TO-220S
RD07MUS2B	7.2	175 / 527 / 870	7	SLP
RD07MVS1	7.2	175 / 520	7	SLP
RD07MVS1B *	7.2	175 / 520	7	SLP
RD07MVS2 *	7.2	175 / 520	7	SLP
RD09MUP2	7.2	520	8	PMM
RD100HHF1	12.5	30	100	CERAMIC (LARGE)
RD12MVS1	7.2	175	11.5	SLP
RD15HVF1	12.5	175	15	TO-220S
RD16HHF1	12.5	30	16	TO-220S
RD20HMF1 *	12.5	900	20	CERAMIC (SMALL)
RD30HVF1 *	12.5	175	30	CERAMIC (SMALL)
RD30HUF1 *	12.5	520	30	CERMAIC (SMALL)
RD35HUF2	12.5	175 / 530	45 / 43 TYP.	HPM
RD35HUP2	12.5	175 / 530	35	HPM
RD45HMF1 *	12.5	900	45	CERAMIC (LARGE)
RD60HUF1	12.5	520	60	CERAMIC ( LARGE)
RD70HUF2	12.5	175 / 530	84 / 75 TYP.	HPM
RD70HVF1	12.5	175 / 520	70 / 50	CERAMIC (LARGE)

RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W

$14.91 As low as: $12.76

MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501

EOL 12/2022
- | Add to Compare
RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V

$54.91 As low as: $44.72

The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.

The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.

Will replace the original RD100HHF1-101.

MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501

Data Sheet
- | Add to Compare
RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

$49.91 As low as: $42.79

Transistor 70 Watts 520 MHz 12.5 Volts

This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant

MFR #: RD70HUF2-501
MFR: Mitsubishi
SKU: RD70HUF2
- | Add to Compare
RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V

$26.91 As low as: $23.07
RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High Power and High Efficiency Pout=75Wtyp
- Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
- Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
- Integrated gate protection diode.
RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501

See Data Sheet
- | Add to Compare