RD
Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.
PART NUMBER | Vdd (V) | f (MHz) | Pout(W) | Package |
RD00HHS1 * | 12.5 | 30 | 0.3 | SOT-89 |
RD00HVS1 * | 1.5 | 175 | 0.5 | SOT-89 |
RD01MUS1 * | 7.2 | 520 | 0.8 | SOT-89 |
RD01MUS2 | 7.2 | 520 | 0.8 | SOT-89 |
RD01MUS2B * | 7.2 | 527 | 1 | SOT-89 |
RD02MUS1 * | 7.2 | 175 / 520 | 2 | SOT-89 |
RD02MUS1B * | 7.2 | 175 / 520 | 2 | SOT-89 |
RD05MMP1 | 7.2 | 941 | 5.5 | PMM |
RD06HHF1 | 12.5 | 30 | 6 | TO-220S |
RD06HVF1 | 12.5 | 175 | 6 | TO-220S |
RD07MUS2B | 7.2 | 175 / 527 / 870 | 7 | SLP |
RD07MVS1 | 7.2 | 175 / 520 | 7 | SLP |
RD07MVS1B * | 7.2 | 175 / 520 | 7 | SLP |
RD07MVS2 * | 7.2 | 175 / 520 | 7 | SLP |
RD09MUP2 | 7.2 | 520 | 8 | PMM |
RD100HHF1 | 12.5 | 30 | 100 | CERAMIC (LARGE) |
RD12MVS1 | 7.2 | 175 | 11.5 | SLP |
RD15HVF1 | 12.5 | 175 | 15 | TO-220S |
RD16HHF1 | 12.5 | 30 | 16 | TO-220S |
RD20HMF1 * | 12.5 | 900 | 20 | CERAMIC (SMALL) |
RD30HVF1 * | 12.5 | 175 | 30 | CERAMIC (SMALL) |
RD30HUF1 * | 12.5 | 520 | 30 | CERMAIC (SMALL) |
RD35HUF2 | 12.5 | 175 / 530 | 45 / 43 TYP. | HPM |
RD35HUP2 | 12.5 | 175 / 530 | 35 | HPM |
RD45HMF1 * | 12.5 | 900 | 45 | CERAMIC (LARGE) |
RD60HUF1 | 12.5 | 520 | 60 | CERAMIC ( LARGE) |
RD70HUF2 | 12.5 | 175 / 530 | 84 / 75 TYP. | HPM |
RD70HVF1 | 12.5 | 175 / 520 | 70 / 50 | CERAMIC (LARGE) |
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RD07MVS2 Mitsubishi Transistor Silicon MOSFET 7 Watt 175/520 MHz (NOS)
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RD07MVS1 Mitsubishi MOSFET Power Transistor Mitsubishi 175MHz 520MHz 7W (NOS)
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RD07MVS1B Mitsubishi Transistor (NOS)
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RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W
$39.91 As low as: $37.91Out of stock
Popular part used in Icom 7300.
RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications
High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diodeRoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501See Data Sheet for more information