Transistors - RF, Mosfets, Misc.
Transistors - RF, Mosfets, Misc.
Please click on a subcategory below to explore our wide range of transistors.
PT4273 TRW RF Power Transistor 173MHz (NOS)
In Stock
PT4273 TRW RF Power Transistor 173MHz (NOS)
New Old Stock * No longer available for export
MFR: TRW
SKU: PT4273
4N25 Toshiba 6 Pin Dip Optoisolaters Transistor (NOS)
In Stock
The 4N25 device consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
- Most Economical Optoisolator Choice for Medium Speed, Switching Applications
- Meets or Exceeds All JEDEC Registered Specifications
New Old Stock
MFR: Toshiba
SKU: 4N25
D45H2 General Electric PNP Expitaxial Silicon Transistor (NOS)
In Stock
- Maximum Collector-Base Voltage |Vcb|: 30 V
- Transition Frequency (ft): 20 MHz
New Old Stock * No longer available for export
MFR: General Electric
SKU: D45H2
IRF510 N-Channel Power MOSFET Transistor 5.6A 100V 0.540 Ohm
In Stock
IRF510 Transistor, 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
Add to Cart
MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)
In Stock
Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 8 pF @ VDS = 28 V
- Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
- Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)
Parts we have available are early version just after Motorola sold to M/A-COM. All parts in stock are produced with original Motorola die.
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA
QBH-105 Q-Bit RF Amplifier 0.5W 5-300 MHz (NOS)
In Stock
- High Gain: 12.2dB Typical
- DC Voltage: +19V
- Continuous RF Input Power: +13 dBm
New Old Stock
MFR: Q-BIT Corporation
SKU: QBH-105
QBH-110 Q-Bit RF Amplifier 0.5W 5-500MHz (NOS)
In Stock
- High Gain: 15.0dB Typical
- DC Voltage: +17V
- Continuous RF Input Power: +13 dBm
New Old Stock
MFR: Q-BIT
SKU: QBH-110
QBH-118 Q-Bit RF Amplifier 0.5W 3-100MHz NOS)
In Stock
- High Gain: 16.3 dB Typical
- DC Voltage: +20V
- Continuous RF Input Power: +13 dBm
New Old Stock
MFR: Q-BIT
SKU: QBH-118
SD148-2 Solid State Transistor (NOS)
In Stock
SD148-2 Solid State Transistor (NOS)
New Old Stock * No longer available for export
MFR: Solid State Scientific
SKU: SD148-2
2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor Matched Pair (2) (NOS)
In Stock
The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.
The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.
For a Matched Quad (4), simply order Two Pairs
MFR: Toshiba, Japan
New Old Stock * No Longer Available for Export
SKU: 2SC2782A-MP
Add to Cart
