Low Noise Gas Fet
Low Noise Gas Fet
This category features low noise gas field-effect transistors (FETs) designed for high-performance applications. These FETs are ideal for circuit configurations that require minimal noise interference. Explore our selection to find the right component for your project.
BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)
In Stock
Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.
- Drain Source Voltage (MAX): 18v
- Drain Current (MAX): 30mA
- Total Power disipation (MAX): 225mW
New Old Stock * No longer available for export
MFR: Philips Electronics
SKU: BF980
BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)
In Stock
- EU RoHS: Compliant
- Configuration: Single Dual Gate
- Channel Type: N
New Old Stock * No longer available for export
MFR: Vishay
SKU: BF966S
MGA87563 AEROFLEX / INMET Monolithic Microwave Integrated Circuit .0.5-4.3 GHz 3 Volts (NOS)
In Stock
Fabricated using gallium arsenide (GaAs)
New Old Stock * No longer available for export
MFR: Aeroflex / Inmet
SKU: MGA87563-BLK
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