MRF/SRF/M Series
Please choose from the following MRF Sub-Catagory choices:
MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)
In Stock
Designed for wideband large signal amplifier and oscillator applications to 500MHz N–Channel enhancement mode
- Guaranteed 28 volt, 500 MHz performance Output power = 2.0 watts Minimum gain = 16 dB (Min.) Efficiency = 55% (Typ.)
- Facilitates manual gain control, ALC and modulation techniques
- Tested for load mismatch at all phase angles with 30:1 VSWR
- Excellent thermal stability and ideally suited for Class A operation
MFR: M/A-COM
SKU: MRF158-MA
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MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V
In Stock
Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET
- Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
MFR: M/A-COM
SKU: MRF160-MA
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)
Out of stock
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET
MRF: M/A-COM
SKU: MRF173MP-MA
MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GU-MA
MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GV-MA
MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V
In Stock
Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET
- MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%
- Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Facilitates manual gain control, ALC and modulation techniques
- Excellent thermal stability, ideally suited for Class A operation
- Low Crss — 4.0 pF @ VDS = 28 V
MFR: M/A-COM
SKU: MRF166C-MA
MRF171A M/A-COM Transistor RF MOSFET 45W 150MHz 28V (NOS)
In Stock
Designed primarily for wideband large–signal output and driver stages from 30–200 MHz, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 45 W, Power gain = 17 dB (min), Efficiency = 60% (min)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 8 pF @ VDS = 28 V
- Gold top metal, Typical data for power amplifier applications in industrial, commercial and amateur radio equipment
- Typical performance at 30 MHz, 28 Vdc, Output power = 30 W (PEP), Power gain = 20 dB (typ.), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (typ.)
Parts we have available are early version just after Motorola sold to M/A-COM. All parts in stock are produced with original Motorola die.
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF171A-MA
MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz
In Stock
Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz
MFR: M/A-COM
SKU: MRF174-MA
MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
MRF: M/A-COM
SKU: MRF175GU-MA
MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
- Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typical @ VDS = 28 V
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175GV-MA
