MRF/SRF/M Series
Please choose from the following MRF Sub-Catagory choices:
MRF176GU Motorola Transistor RF MOSFET 200/150W 500MHz 50V (NOS)
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF176GU-MOT
MRF177 M/A-COM RF MOSFET Transistor 100W 400MHz 28V
In Stock
Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET.
- Typical performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%
- Low thermal resistance
- Low Crss — 10 pF typ. @ VDS = 28 V
- Ruggedness tested at rated output power
- Nitride passivated die for enhanced reliability
- Excellent thermal stability; suited for Class A operation
MRF: M/A-COM
SKU: MRF177-MA
MRF175GU Motorola Transistor 150 Watt 28V 400 MHz (NOS)
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
New Old Stock * No longer available for export
MFR: MRF175GU-MOT
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MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GV-MA
MRF1946 Motorola NPN Silicon Power Transistor 30 Watt 10 dB 12.5 Volt 175 MHz (NOS)
In Stock
Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.
- High Common Emitter Power Gain
- Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
- Diffused Emitter Resistor Ballasting
- Characterized to 220 MHz
- Load Mismatch at High Line and Overdrive Conditions
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF1946
MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
MFR: M/A-COM
SKU: MRF176GU-MA
MRF175LU M/A-COM Transistor RF MOSFET 100W 400MHz 28V (NOS)
In Stock
Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175LU-MA
MRF175GV M/A-COM Transistor 200 watt 28v 225 MHz (NOS)
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),
- Output power — 200 W, Power gain — 14 dB typical, Efficiency — 65% typical
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typical @ VDS = 28 V
New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF175GV-MA
MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz
In Stock
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode
- Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
- 100% ruggedness tested at rated output power
- Low thermal resistance
- Low Crss — 20 pF typ @ VDS = 28 V
MRF: M/A-COM
SKU: MRF175GU-MA
MRF174 M/A-COM Transistor RF MOSFET 125W 200MHz
In Stock
Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range, N–Channel enhancement mode MOSFET
- Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W, Minimum gain = 9.0 dB, Efficiency = 50% (min.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low noise figure — 3.0 dB typ. at 2.0 A, 150 MHz
MFR: M/A-COM
SKU: MRF174-MA
