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MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz Matched Pair (2)

Out of stock

$97.90

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode MOSFET


MRF:  M/A-COM
SKU: MRF173MP-MA

MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

Out of stock

$90.90

MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM


TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles


Applications



  • Aerospace and Defense

  • ISM 


SKU: MRF150-MA

MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)
MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

In Stock

Designed for power amplifier applications in industrial,  commercial and amateur radio equipment to 175MHz.


New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF148A-MA

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MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V
MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

In Stock

$66.90

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.



  • Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%

  • Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB

  • Low thermal resistance

  • Ruggedness tested at rated output power

  • Nitride passivated die for enhanced reliability


New Old Stock * No longer available for export
MFR: M/A-COM
SKU: MRF141-MA

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MRF141G M/A-COM RF Power FET 300W 175MHz 28V
MRF141G M/A-COM RF Power FET 300W 175MHz 28V

In Stock

$249.90


  • Ruggedness tested at rated output power

  • Nitride passivated die for enhanced reliability

  • Operating Frequency: 175 MHz

  • Gain: 12 Db

  • Output Power: 300 W


MFR: MA/COM
SKU: MRF141G-MA

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MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)
MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

In Stock

$145.90

Made with original Motorola Die


Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode



  • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)

  • Superior high order IMD

  • MD(d3) (150 W PEP): –30 dB (Typ.)

  • IMD(d11) (150 W PEP): –60 dB (Typ.)

  • 100% tested for load mismatch at all phase angles with 30:1 VSWR


MFR: M/A-COM
SKU: MRF140-MP-MA

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MRF140 M/A-COM Transistor 150W 28V 150 MHz
MRF140 M/A-COM Transistor 150W 28V 150 MHz

In Stock

$72.90

Made with original Motorola Die


Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode



  • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)

  • Superior high order IMD

  • MD(d3) (150 W PEP): –30 dB (Typ.)

  • IMD(d11) (150 W PEP): –60 dB (Typ.)

  • 100% tested for load mismatch at all phase angles with 30:1 VSWR


MFR: M/A-COM
SKU: MRF140-MA


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MRF137 M/A-COM Transistor 30W 28V 400 MHz
MRF137 M/A-COM Transistor 30W 28V 400 MHz

In Stock

$39.90

Designed for wideband large signal output and drive stages Product Image  up to 400 MHz range.  N–Channel enhancement mode


• Guaranteed 28 V, 150 MHz performance  Output power = 30 W  Minimum gain = 13 dB  Efficiency — 60% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques


Limit, 10 per customer.


MFR: M/A-COM


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MRF136 M/A-COM Transistor 15 watt 28v 400 MHz
MRF136 M/A-COM Transistor 15 watt 28v 400 MHz

In Stock

Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in single-ended configuration  N–Channel enhancement mode
.
• Guaranteed 28 volt, 150 MHz performance  Output power = 15 watts  Narrowband gain = 16 dB (Typ.)  Efficiency = 60% (Typ.)
• Small– and large–signal characterization
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Excellent thermal stability, ideally suited for Cass A operation
• Facilitates manual gain control, ALC and modulation techniques


MFR: M/A-COM
SKU: MRF136-MA

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MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

In Stock

Made with original Motorola Die


Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.



  • Guaranteed performance at 400 MHz, 28 Vdc

  • Output power = 10 W

  • Power gain = 12 dB min.

  • Efficiency = 50% min.

  • 100% tested for load mismatch at all phase angles with 30:1 VSWR

  • Gold metallization system for high reliability

  • Computer–controlled wirebonding gives consistent input Impedance


MRF: M/A-COM
SKU: MRF134-MA

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