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MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz
MRF134 M/A-COM RF Bipolar Transistor 5 watt 28v 400 MHz

In Stock

Made with original Motorola Die


Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.



  • Guaranteed performance at 400 MHz, 28 Vdc

  • Output power = 10 W

  • Power gain = 12 dB min.

  • Efficiency = 50% min.

  • 100% tested for load mismatch at all phase angles with 30:1 VSWR

  • Gold metallization system for high reliability

  • Computer–controlled wirebonding gives consistent input Impedance


MRF: M/A-COM
SKU: MRF134-MA

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MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

In Stock

Made with original Motorola Die


Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode


MFR: M/A-COM
SKU: MRF136Y-MA

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MRF140 M/A-COM Transistor 150W 28V 150 MHz
MRF140 M/A-COM Transistor 150W 28V 150 MHz

In Stock

$72.90

Made with original Motorola Die


Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode



  • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)

  • Superior high order IMD

  • MD(d3) (150 W PEP): –30 dB (Typ.)

  • IMD(d11) (150 W PEP): –60 dB (Typ.)

  • 100% tested for load mismatch at all phase angles with 30:1 VSWR


MFR: M/A-COM
SKU: MRF140-MA


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MRF141G M/A-COM RF Power FET 300W 175MHz 28V
MRF141G M/A-COM RF Power FET 300W 175MHz 28V

In Stock

$249.90


  • Ruggedness tested at rated output power

  • Nitride passivated die for enhanced reliability

  • Operating Frequency: 175 MHz

  • Gain: 12 Db

  • Output Power: 300 W


MFR: MA/COM
SKU: MRF141G-MA

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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

In Stock

$181.90

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.


• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles


Applications



  • Aerospace and Defense

  • ISM 


MFR: M/A-COM
SKU:MRF150-MA-MP

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MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V
MRF166W M/A-COM Transistor RF MOSFET 40W 500MHz 28V

In Stock

Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz, N–Channel enhancement mode MOSFET


MFR: M/A-COM
SKU: MRF166W-MA

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MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V
MRF173CQ M/A-COM RF MOFSET Transistor 80W 175MHz 28V

In Stock

$44.90

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.  N–Channel enhancement mode MOSFET.


MRF: M/A-COM
SKU: MRF173CQ-MA

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MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz
MRF173 M/A-COM RF MOFSET Transistor 80 watt 28v 175 MHz

In Stock

Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. N–Channel enhancement mode MOSFET.


MFR: M/A-COM
SKU: MRF173-MA

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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

In Stock

$363.90

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.


• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles


Applications



  • Aerospace and Defense

  • ISM 


MFR: M/A-COM
SKU: MRF150-MA-MQ

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MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V
MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

In Stock

$594.90

The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.


The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.


Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts  
Power gain = 17 dB (typical)  
Efficiency = 45% (typical)


Not available for export
MFR: M/A-COM
SKU: MRF154-MA


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