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MRF/SRF/M Series

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  1. MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    MRF140 M/A-COM Transistor 150W 28V 150 MHz Matched Pair (2)

    $249.91

    Made with original Motorola Die

    Designed primarily for linear large–signal output stages up to  150 MHz frequency range.  N–Channel enhancement mode

    • Specified 28 volts, 30 MHz characteristics  Output power = 150 watts  Power gain = 15 dB (Typ.)  Efficiency = 40% (Typ.)
    • Superior high order IMD
    • MD(d3) (150 W PEP): –30 dB (Typ.)
    • IMD(d11) (150 W PEP): –60 dB (Typ.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: M/A-COM
    SKU: MRF140-MP-MA

  2. MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    MRF141G M/A-COM RF Power FET 300W 175MHz 28V

    $265.91

    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability
    • Operating Frequency: 175 MHz
    • Gain: 12 Db
    • Output Power: 300 W

    MFR: MA/COM
    SKU: MRF141G-MA

  3. MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    MRF141 M/A-COM Transistor RF Power FET 150W 175MHz 28V

    Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high  gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency  band solid state transmitters and amplifiers.

    • Guaranteed performance at 30 MHz, 28V:  Output power: 150W  Gain: 8dB (22dB Typ.)  Efficiency: 40%
    • Typical Performance at 175MHz, 50V:  Output Power: 150 W  Gain: 13 dB
    • Low thermal resistance
    • Ruggedness tested at rated output power
    • Nitride passivated die for enhanced reliability

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF141-MA

  4. MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

    $118.91

    Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.

    • Enhanced thermal performance
    • Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 18 dB (22 dB Typ)
    • Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
    • Output Power — 150 W
    • Gain — 13 dB
    • Low Thermal Resistance
    • Ruggedness Tested at Rated Output Power
    • Nitride Passivated Die for Enhanced Reliability

    MFR: M/A-COM
    SKU: MRF151A-MA

  5. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

    $307.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  6. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

    $153.91

    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    MFR: M/A-COM

  7. MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V

    $76.91

    MRF150 RF Power FET Transistor 150W to 150MHz 50V M/A-COM
    TMOS Designed primarily for linear large-signal output stages up to 150 MHz.

    • Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
    • Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
    • 100% tested for load mismatch at all phase angles

    Applications

    • Aerospace and Defense
    • ISM 

    SKU: MRF150-MA

  8. MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    MRF148A M/A-COM Linear RF Power FET 30W 175MHz 50V (NOS)

    Designed for power amplifier applications in industrial,  commercial and amateur radio equipment to 175MHz.

    New Old Stock * No longer available for export
    MFR: M/A-COM
    SKU: MRF148A-MA

  9. MRF1946A Motorola NPN Silicon Power Transistor Stud Mount 30 Watt 10 dB 12.5 Volt 175 MHz Matched Pair (2) (NOS)

    MRF1946A Motorola NPN Silicon Power Transistor Stud Mount 30 Watt 10 dB 12.5 Volt 175 MHz Matched Pair (2) (NOS)

    $109.91

    Designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.

    • High Common Emitter Power Gain
    • Specified 12.5 V, 175 MHz Performance: Output Power = 30 Watts, Power Gain = 10 dB, Efficiency = 60%
    • Diffused Emitter Resistor Ballasting
    • Characterized to 220 MHz
    • Load Mismatch at High Line and Overdrive Conditions

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MFR1946A-MP

  10. MRF250 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 50W (NOS)

    MRF250 Motorola NPN Silicon RF Power Transistor 12.5V 175 MHz 50W (NOS)

    $22.91

    Designed for 12.5 Volt VHF large-signal amplifier applications in industrial and commercial equipment operating to 200 MHz.

    New Old Stock * No longer available for export
    MFR:Motorola
    SKU: MRF250

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