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MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz
MRF136Y M/A-COM Transistor 30 watt 28v 400 MHz

In Stock

Made with original Motorola Die


Designed for wideband large signal amplifier and oscillator applications  Up to 400 MHz range, in either single-ended or push-pull configuration. N–Channel enhancement mode


MFR: M/A-COM
SKU: MRF136Y-MA

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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Pair (2)

In Stock

$181.90

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.


• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles


Applications



  • Aerospace and Defense

  • ISM 


MFR: M/A-COM
SKU:MRF150-MA-MP

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MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)
MRF150 M/A-COM RF Power FET Transistor 150W to 150MHz 50V Matched Quad (4)

In Stock

$363.90

TMOS Designed primarily for linear large-signal output stages up to 150 MHz.


• Superior high order IMD  IMD(d3) (150W PEP): –32dB (Typ.)  IMD(d11) (150W PEP): –60dB (Typ.) 
• Specified 50V, 30MHz characteristics  Output power = 150 Watts  Power gain = 17 dB (Typ.)  Efficiency = 45% (Typ.) 
• 100% tested for load mismatch at all phase angles


Applications



  • Aerospace and Defense

  • ISM 


MFR: M/A-COM
SKU: MRF150-MA-MQ

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MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET
MRF151A M/A-COM RF Power Field-Effect Transistor 150W 50V 175MHz N-Channel Broadband MOSFET

In Stock

$118.91

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands.  (Improved version of the MRF151)


• Enhanced thermal performance
• Higher power dissipation  Guaranteed Performance at 30 MHz, 50 V:
• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%  Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability


MFR: M/A-COM
SKU: MRF151A-MA

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MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)
MRF151G Motorola M/A-COM MOSFET Power Transistor 300W 50V 175 MHz Early Version (NOS)

In Stock

$179.90

The MRF151G MA/COM Transistor is an early version, produced with the Motorola die.


Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.


New Old Stock * No longer available for export
MFR: Motorola M/A-COM USA
SKU: MRF151G-MA-M

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MRF151 M/A-COM RF Power Field-Effect MOSFET Transistor 150W 50V 175 MHz N-Channel Broadband
MRF151 M/A-COM RF Power Field-Effect MOSFET Transistor 150W 50V 175 MHz N-Channel Broadband

In Stock

$79.91

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands. (The MRF151A is an improved version of the MRF151)


Features guaranteed Performance at 30 MHz, 50 V:


• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability


MFR: M/A-COM
SKU: MRF151-MA

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MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET
MRF151 RF Power Field-Effect Transistor Matched Pair (2)150 Watt 50 Volt 175 MHz N-Channel Broadband MOSFET

In Stock

$159.90

Designed for broadband commercial and military  applications at frequencies to 175 MHz. The high  power, high gain and broadband performance of this  device makes possible solid state transmitters for  FM broadcast or TV channel frequency bands. (The MRF151A is an improved version of the MRF151)


Features guaranteed Performance at 30 MHz, 50 V:


• Output Power — 150 W
• Gain — 18 dB (22 dB Typ)
• Efficiency — 40%
Typical Performance at 175 MHz, 50 V:
• Output Power — 150 W
• Gain — 13 dB
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability


MRF: MA/COM
SKU: MRF151MP-MA

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MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V
MRF154 M/A-COM Broadband RF Power MOSFET Transistor 600W to 80MHz 50V

In Stock

$594.90

The MRF154 transistor is commonly used in a variety of RF power amplifier applications, such as in radio and television broadcasting, wireless communication systems, and radar systems. It is also used in industrial applications, such as in welding equipment and plasma generators.


The MRF154 transistor is a high-quality and reliable component that offers excellent performance in a wide range of RF power applications. Its high power rating, frequency range, and voltage rating make it a popular choice for use in a variety of high-power applications.


Designed primarily for linear large signal output stages in the 2.0 to 100 MHz frequency range.  
N–Channel enhancement mode MOSFET.
Specified 50 volts
30 MHz characteristics
Output power = 600 watts  
Power gain = 17 dB (typical)  
Efficiency = 45% (typical)


Not available for export
MFR: M/A-COM
SKU: MRF154-MA


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MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V
MRF166C M/A-COM RF MOSFET Transistor 20W 500MHz 28V

In Stock

 Designed primarily for wideband large–signal output and driver from 30–500MHz, N–Channel enhancement mode MOSFET



  • MRF166C — Guaranteed performance at 500 MHz, 28 Vdc, Output power = 20 W, Gain = 13.5 dB, Efficiency = 50%

  • Replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001

  • 100% tested for load mismatch at all phase angles with 30:1 VSWR

  • Facilitates manual gain control, ALC and modulation techniques

  • Excellent thermal stability, ideally suited for Class A operation

  • Low Crss — 4.0 pF @ VDS = 28 V


MFR: M/A-COM
SKU: MRF166C-MA

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MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)
MRF158 M/A-COM Transistor 2 watt 28 500 MHz (NOS)

In Stock

Designed for wideband large signal amplifier and oscillator  applications to 500MHz  N–Channel enhancement mode



  • Guaranteed 28 volt, 500 MHz performance  Output power = 2.0 watts  Minimum gain = 16 dB (Min.)  Efficiency = 55% (Typ.)

  • Facilitates manual gain control, ALC and modulation techniques

  • Tested for load mismatch at all phase angles with 30:1 VSWR

  • Excellent thermal stability and ideally suited for Class A operation


MFR: M/A-COM
SKU: MRF158-MA




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