RD
Mitsubishi RD Series - Silicon RF devices are widely used in portable wireless communication devices that operate in the frequency band under 1GHz in order to amplify their transmission power. Mitsubishi Silicon RF devices which are the key parts for amplifying power of the transmission stage of mobile wireless communication devices in the high-frequency band from several MHz to 1GHz robustly support wireless communication networks with a wide range of product lineup such as mobile professional radio equipment for public agency use, amateur radio equipment, and the onboard vehicle telematics market.
* Indicates limited quantity / discontinued item. Check with Sales Staff for available quantity.
| PART NUMBER | Vdd (V) | f (MHz) | Pout(W) | Package |
|---|---|---|---|---|
| RD00HHS1 * | 12.5 | 30 | 0.3 | SOT-89 |
| RD00HVS1 * | 1.5 | 175 | 0.5 | SOT-89 |
| RD01MUS1 * | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2 | 7.2 | 520 | 0.8 | SOT-89 |
| RD01MUS2B * | 7.2 | 527 | 1 | SOT-89 |
| RD02MUS1 * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD02MUS1B * | 7.2 | 175 / 520 | 2 | SOT-89 |
| RD05MMP1 | 7.2 | 941 | 5.5 | PMM |
| RD06HHF1 | 12.5 | 30 | 6 | TO-220S |
| RD06HVF1 | 12.5 | 175 | 6 | TO-220S |
| RD07MUS2B | 7.2 | 175 / 527 / 870 | 7 | SLP |
| RD07MVS1 | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS1B * | 7.2 | 175 / 520 | 7 | SLP |
| RD07MVS2 * | 7.2 | 175 / 520 | 7 | SLP |
| RD09MUP2 | 7.2 | 520 | 8 | PMM |
| RD100HHF1 | 12.5 | 30 | 100 | CERAMIC (LARGE) |
| RD12MVS1 | 7.2 | 175 | 11.5 | SLP |
| RD15HVF1 | 12.5 | 175 | 15 | TO-220S |
| RD16HHF1 | 12.5 | 30 | 16 | TO-220S |
| RD20HMF1 * | 12.5 | 900 | 20 | CERAMIC (SMALL) |
| RD30HVF1 * | 12.5 | 175 | 30 | CERAMIC (SMALL) |
| RD30HUF1 * | 12.5 | 520 | 30 | CERMAIC (SMALL) |
| RD35HUF2 | 12.5 | 175 / 530 | 45 / 43 TYP. | HPM |
| RD35HUP2 | 12.5 | 175 / 530 | 35 | HPM |
| RD45HMF1 * | 12.5 | 900 | 45 | CERAMIC (LARGE) |
| RD60HUF1 | 12.5 | 520 | 60 | CERAMIC ( LARGE) |
| RD70HUF2 | 12.5 | 175 / 530 | 84 / 75 TYP. | HPM |
| RD70HVF1 | 12.5 | 175 / 520 | 70 / 50 | CERAMIC (LARGE) |
RD15HVF1-501 Mitsubishi MOSFET RF Power Transistor 175 MHz 15W
In Stock
MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501
EOL 12/2022
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RD100HHF1C-501 Mitsubishi MOSFET Silicon Power Transistor 30MHz 100W 12.5V
In Stock
The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.
The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.
Will replace the original RD100HHF1-101.
MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501
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RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V
In Stock
Transistor 70 Watts 520 MHz 12.5 Volts
This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant
MFR #: RD70HUF2-501
MFR: Mitsubishi
SKU: RD70HUF2
RD70HUP2-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz - 530MHz 70W 12.5V
In Stock
RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
- High Power and High Efficiency Pout=75Wtyp
- Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
- Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
- Integrated gate protection diode.
RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501
See Data Sheet
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